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    CMP OF NOBLE METALS
    1.
    发明申请
    CMP OF NOBLE METALS 审中-公开
    金属CMP

    公开(公告)号：WO2005005561A1

    公开(公告)日：2005-01-20

    申请号：PCT/US2004/017601

    申请日：2004-06-03

    Applicant: CABOT MICROELECTRONICS CORPORATION

    Inventor： DE REGE THESAURO, Francesco ,  BRUSIC, Vlasta ,  BAYER, Benjamin, P.

    IPC: C09G1/02

    CPC classification number: C09G1/02 ,  C23F3/00 ,  H01L21/3212

    Abstract: The invention provides a method of polishing a substrate comprising (i) contacting a substrate comprising a noble metal layer with a chemical-mechanical polishing system comprising (a) a polishing component, (b) an oxidizing agent, and (c) a liquid carrier, and (ii) abrading at least a portion of the noble metal layer to polish the substrate. The polishing component is selected from the group consisting of an abrasive, a polishing pad, or a combination thereof, and the oxidizing agent is selected from the group consisting of bromates, bromites, hypobromites, chlorates, chlorites, hypochlorites, perchlorates, iodates, hypoiodites, periodates, peroxyacetic acid, organo-halo-oxy compounds, salts thereof, and combinations thereof. The chemical-mechanical polishing system has a pH of 9 or less, and the oxidizing agent does not produce a substantial amount of elemental halogen. The invention also provides a method of polishing a substrate comprising a noble metal layer and a second layer using the aforementioned polishing system that further comprises a stopping compound.

    Abstract translation: 本发明提供了一种抛光衬底的方法，其包括（i）使包含贵金属层的衬底与化学机械抛光系统接触，所述化学机械抛光系统包括（a）抛光组分，（b）氧化剂和（c）液体载体 ，和（ii）研磨贵金属层的至少一部分以抛光基底。 抛光组分选自研磨剂，抛光垫或其组合，氧化剂选自溴酸盐，溴酸盐，次溴酸盐，氯酸盐，亚氯酸盐，次氯酸盐，高氯酸盐，碘酸盐，次碘酸盐 ，高碘酸酯，过氧乙酸，有机卤代氧化合物，其盐，及其组合。 化学机械抛光系统的pH值为9以下，氧化剂不产生大量的元素卤素。 本发明还提供了一种使用上述抛光系统抛光包含贵金属层和第二层的衬底的方法，所述抛光系统还包括停止化合物。

    CHEMICAL-MECHANICAL POLISHING OF METALS IN AN OXIDIZED FORM
    2.
    发明申请
    CHEMICAL-MECHANICAL POLISHING OF METALS IN AN OXIDIZED FORM 审中-公开

    公开(公告)号：WO2005068572A3

    公开(公告)日：2005-07-28

    申请号：PCT/US2005/000140

    申请日：2005-01-05

    Applicant: CABOT MICROELECTRONICS CORPORATION

    Inventor： DE REGE THESAURO, Francesco ,  BRUSIC, Vlasta ,  BAYER, Benjamin, P.

    IPC: C09G1/02

    Abstract: The invention provides a method for polishing a substrate comprising a metal in an oxidized form, the method comprising the steps of: (a) providing a substrate comprising a metal in an oxidized form, (b) contacting a portion of the substrate with a chemical-mechanical polishing system comprising: (i) a polishing component, (ii) a reducing agent, and (iii) a liquid carrier, and (c) abrading at least a portion of the metal in an oxidized form to polish the substrate. The reducing agent can be selected from the group consisting of 3-hydroxy-4-pyrones, α-hydroxy-γ-butyrolactones, ascorbic acid, borane, borohydrides, dialkylamine boranes, formaldehyde, formic acid, hydrogen, hydroquinones, hydroxylamine, hypophosphorous acid, phosphorous acid, a metal or metal ions in an oxidation state having a standard redox potential that is less than the standard redox potential of the metal in an oxidized form, trihydroxybenzenes, solvated electrons, sulfurous acid, salts thereof, and mixtures thereof.

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