公开(公告)号：WO2006108108A3

公开(公告)日：2008-01-17

申请号：PCT/US2006012919

申请日：2006-04-06

Applicant: REM TECHNOLOGIES ,  WINKELMANN LANE W

Inventor： WINKELMANN LANE W

IPC: C23F1/10 ,  C23F1/14 ,  C23F1/16 ,  C23F1/28 ,  C23F11/00 ,  C23F11/04 ,  C23F11/18

CPC classification number: B24B31/06 ,  C23C22/73 ,  C23C22/83 ,  C23F3/00

Abstract: A method for superfinishing a high density carbide steel component using chemically accelerated finishing is provided. The high density carbide steel component is vibrated in a vessel containing a plurality of media, with active chemistry being added to the vessel at a low flow rate. An active chemistry composition is also provided, consisting of one or more conversion coating agents having preferably a phosphate radical, and one or more chelating agents preferably including citric acid.

Abstract translation: 提供了一种使用化学加速精加工来对高密度碳化钢组件进行超精加工的方法。 高密度碳化钢组分在含有多种介质的容器中振动，活性化学物质以低流速加入容器中。 还提供了一种活性化学组合物，其由一种或多种优选具有磷酸根的转化包衣剂和一种或多种螯合剂组成，优选包括柠檬酸。

公开(公告)号：WO2007035880A2

公开(公告)日：2007-03-29

申请号：PCT/US2006/036848

申请日：2006-09-21

Applicant: APPLIED MATERIALS, INC. ,  SHANMUGASUNDRAM, Arulkumar ,  WEIDMAN, Timothy W.

Inventor： SHANMUGASUNDRAM, Arulkumar ,  WEIDMAN, Timothy W.

IPC: H05K3/00 ,  B05D3/00 ,  B05D1/18 ,  C23F1/00

CPC classification number: C23F3/04 ,  C23C18/1608 ,  C23C18/1619 ,  C23F3/00 ,  H01L21/02074 ,  H01L21/02087 ,  H01L21/288 ,  H01L21/6723 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76879 ,  H05K3/045 ,  H05K3/422 ,  H05K2201/09563

Abstract: Embodiments of the invention generally provide a cluster tool that is configured to electrolessly fill features formed on a substrate. More particularly, embodiments of the invention allow for the filling of interconnect or contact level features using an electroless fill process and ECMP material removal steps. A typical sequence for forming an interconnect includes depositing one or more non-conductive layers, etching at least one of the layer(s) to form one or more features therein, depositing a barrier layer in the feature(s) and depositing one or more conductive layers, such as copper, to fill the feature.

Abstract translation: 本发明的实施例通常提供一种构造成无电填充形成在基底上的特征的簇工具。 更具体地，本发明的实施例允许使用无电填充过程和ECMP材料去除步骤来填充互连或接触水平特征。 用于形成互连的典型顺序包括沉积一个或多个非导电层，蚀刻所述层中的至少一个以在其中形成一个或多个特征，在所述特征中沉积阻挡层并沉积一个或多个 导电层，如铜，以填补特征。

公开(公告)号：WO2005017617A8

公开(公告)日：2006-06-01

申请号：PCT/US0334347

申请日：2003-10-27

Applicant: HONEYWELL INT INC ,  HUANG WEI ,  KENNEDY JOSEPH ,  KATSANES RONALD

Inventor： HUANG WEI ,  KENNEDY JOSEPH ,  KATSANES RONALD

IPC: B05D5/12 ,  B32B27/42 ,  C08J3/00 ,  C08J7/02 ,  G03C1/00

CPC classification number: C08J7/02 ,  C04B26/12 ,  C04B2111/00482 ,  C08J2361/00 ,  C23F1/10 ,  C23F1/44 ,  C23F3/00 ,  C23F3/04 ,  H01L21/31051 ,  H01L21/312 ,  Y10T428/31942 ,  C04B2103/0093 ,  C04B2103/40

Abstract: A planarization composition is disclosed herein that comprises: a) a structural constituent; and b) a solvent system, wherein the solvent system is compatible with the structural constituent and lowers the lowers at least one of the intermolecular forces or surface forces components of the planarization composition. A film that includes this planarization composition is also disclosed. In addition, another planarization composition is disclosed herein that comprises: a) a cresol-based polymer compound; and b) a solvent system comprising at least one alcohol and at least one ether acetate-based solvent. A film that includes this planarization composition is also disclosed. A layered component is also disclosed herein that comprises: a) a substrate having a surface topography; and b) a planarization composition or a film such as those described herein, wherein the composition is coupled to the substrate. Methods of forming a planarization compositions are also disclosed herein that comprise: a) providing a structural constituent; b) providing a solvent system, wherein the solvent system is compatible with the structural constituent and lowers at least one of the intermolecular forces or surface forces components of the planarization composition; and c) blending the structural constituent and the solvent system to form a planarization composition. Methods of forming a film are also disclosed that comprise: a) providing a planarization composition such as those disclosed herein; and b) evaporating at least part of the solvent system to form a film.

Abstract translation: 本文公开了一种平面化组合物，其包括：a）结构成分; 和b）溶剂体系，其中所述溶剂体系与所述结构组分相容并降低所述平坦化组合物的至少一种分子间力或表面力组分。 还公开了包含该平坦化组合物的膜。 此外，本文公开了另外的平坦化组合物，其包括：a）甲酚基聚合物化合物; 和b）包含至少一种醇和至少一种乙酸乙烯酯类溶剂的溶剂体系。 还公开了包含该平坦化组合物的膜。 本文还公开了一种分层组件，其包括：a）具有表面形貌的衬底; 和b）平面化组合物或诸如本文所述的那些的膜，其中所述组合物与所述基材偶联。 本文还公开了形成平坦化组合物的方法，其包括：a）提供结构成分; b）提供溶剂体系，其中所述溶剂体系与所述结构组分相容并降低所述平坦化组合物的分子间力或表面力组分中的至少一种; 和c）将结构成分和溶剂体系混合以形成平坦化组合物。 还公开了形成膜的方法，其包括：a）提供诸如本文公开的那些的平坦化组合物; 和b）蒸发至少部分溶剂系统以形成膜。

公开(公告)号：WO2005042658A1

公开(公告)日：2005-05-12

申请号：PCT/US2004/034563

申请日：2004-10-21

Applicant: EKC TECHNOLOGY, INC. ,  YAO, Li ,  SMALL, Robert, J.

Inventor： YAO, Li ,  SMALL, Robert, J.

IPC: C09G1/02

CPC classification number: C09G1/02 ,  C09G1/04 ,  C23F3/00 ,  H01L21/3212

Abstract: The present invention relates generally to a chemical mechanical polishing composition for polishing a metal, a metal oxide, and/or a metal nitride layer of a substrate, which composition is substantially free of abrasive particles and comprises: a hydroxylamine derivative; a corrosion inhibitor; and water, wherein water comprises, the majority of the composition. The composition may optionally include, or alternately be substantially free from, one or more of the following: hydroxylamine, acid and/or bas(,. to adjust pH, two carbon atom linkage alkanolamine compounds, quaternary ammonium salts, chelating agents, organic solvents, non-hydroxyl-containing amine compounds, surfactants, additional oxidizing agents, and non-abrasive additives. A process for chemically mechanically polishing a substrate using such a polishing composition is also provided herein.

Abstract translation: 本发明一般涉及用于抛光基材的金属，金属氧化物和/或金属氮化物层的化学机械抛光组合物，该组合物基本上不含磨料颗粒，并且包括：羟胺衍生物; 腐蚀抑制剂; 和水，其中水包含大部分组合物。 组合物可以任选地包括或替代地基本上不含以下的一种或多种：羟胺，酸和/或碱（调节pH，两个碳原子键链烷醇胺化合物，季铵盐，螯合剂，有机溶剂 非羟基胺化合物，表面活性剂，附加氧化剂和非研磨性添加剂。本文还提供使用这种抛光组合物对基材进行化学机械研磨的方法。

公开(公告)号：WO2005005561A1

公开(公告)日：2005-01-20

申请号：PCT/US2004/017601

申请日：2004-06-03

Applicant: CABOT MICROELECTRONICS CORPORATION

Inventor： DE REGE THESAURO, Francesco ,  BRUSIC, Vlasta ,  BAYER, Benjamin, P.

IPC: C09G1/02

CPC classification number: C09G1/02 ,  C23F3/00 ,  H01L21/3212

Abstract: The invention provides a method of polishing a substrate comprising (i) contacting a substrate comprising a noble metal layer with a chemical-mechanical polishing system comprising (a) a polishing component, (b) an oxidizing agent, and (c) a liquid carrier, and (ii) abrading at least a portion of the noble metal layer to polish the substrate. The polishing component is selected from the group consisting of an abrasive, a polishing pad, or a combination thereof, and the oxidizing agent is selected from the group consisting of bromates, bromites, hypobromites, chlorates, chlorites, hypochlorites, perchlorates, iodates, hypoiodites, periodates, peroxyacetic acid, organo-halo-oxy compounds, salts thereof, and combinations thereof. The chemical-mechanical polishing system has a pH of 9 or less, and the oxidizing agent does not produce a substantial amount of elemental halogen. The invention also provides a method of polishing a substrate comprising a noble metal layer and a second layer using the aforementioned polishing system that further comprises a stopping compound.

Abstract translation: 本发明提供了一种抛光衬底的方法，其包括（i）使包含贵金属层的衬底与化学机械抛光系统接触，所述化学机械抛光系统包括（a）抛光组分，（b）氧化剂和（c）液体载体 ，和（ii）研磨贵金属层的至少一部分以抛光基底。 抛光组分选自研磨剂，抛光垫或其组合，氧化剂选自溴酸盐，溴酸盐，次溴酸盐，氯酸盐，亚氯酸盐，次氯酸盐，高氯酸盐，碘酸盐，次碘酸盐 ，高碘酸酯，过氧乙酸，有机卤代氧化合物，其盐，及其组合。 化学机械抛光系统的pH值为9以下，氧化剂不产生大量的元素卤素。 本发明还提供了一种使用上述抛光系统抛光包含贵金属层和第二层的衬底的方法，所述抛光系统还包括停止化合物。

公开(公告)号：WO2003060028A1

公开(公告)日：2003-07-24

申请号：PCT/US2002/040504

申请日：2002-12-17

Applicant: MICRON TECHNOLOGY, INC.

Inventor： VAARTSTRA, Brian, A.

IPC: C09G1/02

CPC classification number: C23F3/04 ,  C09G1/02 ,  C23F3/00 ,  H01L21/3212

Abstract: A planarization method includes providing a metal-containing surface (preferably, a Group VIII metal-containing surface, and more preferably a platinum-containing surface) and positioning it for contact with a polishing surface in the presence of a planarization composition that includes a halogen and a halide salt.

Abstract translation: 平面化方法包括优选提供含金属的表面，优选含有Ⅷ族金属的表面，更优选提供含铂的表面，并且在包含卤素和/或金属的平面化组合物的存在下将其定位成与抛光表面接触 卤化物盐。

公开(公告)号：WO2002081584A1

公开(公告)日：2002-10-17

申请号：PCT/US2002/009805

申请日：2002-03-27

Applicant: RODEL HOLDINGS, INC.

Inventor： COSTAS, Wesley, D. ,  LACK, Craig, D. ,  SAUCY, Daniel, A.

IPC: C09G1/02

CPC classification number: C23F3/00 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/3212

Abstract: An aqueous polishing composition for chemical mechanical polishing to remove copper from a buffer material, the composition comprising, an oxidizing agent, a complexing agent, an inhibitor, a dishing reducing agent, and abrasive particles comprising organic polymer particles for clearing relatively soft copper from the buffer material by chemical mechanical polishing while minimizing dishing and avoiding removal of the buffer material.

Abstract translation: 一种用于化学机械抛光以从缓冲材料中除去铜的水性抛光组合物，所述组合物包含氧化剂，络合剂，抑制剂，凹陷还原剂和包含有机聚合物颗粒的磨料颗粒，用于从 通过化学机械抛光缓冲材料，同时最小化凹陷并避免缓冲材料的去除。

公开(公告)号：WO02033023A1

公开(公告)日：2002-04-25

申请号：PCT/US2001/042524

申请日：2001-10-05

IPC: B24B37/00 ,  C09G1/02 ,  C09K3/14 ,  C09K13/06 ,  C23F3/00 ,  H01L21/304 ,  H01L21/321 ,  C09K13/00 ,  H01L21/302

CPC classification number: C09G1/02 ,  C23F3/00

Abstract: The present invention provides a chemical-mechanical polishing slurry for use in removing copper overlaying a tantalum-based barrier layer during the fabrication of a copper damascene structure, and a method of retarding the corrosion of copper lines during the chemical-mechanical polishing of a copper damascene structure using the slurry. The slurry according to the invention includes an oxidizing agent that releases free radicals and a non-chelating free radical quencher that is effective to retard the corrosion of the copper lines during chemical-mechanical polishing. Preferred oxidizing agents that release free radical used in the slurry according to the invention include peroxides, peroxydiphosphates, and persulfates. Preferred non-chelating free radical quenchers used in the slurry according to the invention include ascorbic acid, thiamine, 2-propanol, and alkyl glycols, with ascorbic acid being most preferred.

Abstract translation: 本发明提供了一种用于在铜镶嵌结构的制造期间去除覆盖钽基阻挡层的铜的化学机械抛光浆料，以及在铜化学机械抛光期间延缓铜线腐蚀的方法 大马士革结构使用浆料。 根据本发明的浆料包括释放自由基的氧化剂和非化学自由基猝灭剂，其在化学机械抛光期间有效地延缓铜线的腐蚀。 根据本发明的用于浆料中释放自由基的优选氧化剂包括过氧化物，过氧二磷酸酯和过硫酸盐。 用于根据本发明的浆料中的优选的非螯合自由基猝灭剂包括抗坏血酸，硫胺素，2-丙醇和烷基二醇，其中抗坏血酸是最优选的。

公开(公告)号：WO01006555A1

公开(公告)日：2001-01-25

申请号：PCT/US2000/018723

申请日：2000-07-10

IPC: H01L21/3213 ,  C23F3/00 ,  H01L21/306 ,  H01L21/321 ,  C23F3/06

CPC classification number: H01L21/32134 ,  C23F3/00 ,  H01L21/32115

Abstract: The present invention describes methods and chemical compositions for the spin etch planarization of surfaces, particularly copper and tantalum. An etching solution is brought into contact with the upper face of a spinning wafer through a nozzle, preferably an oscillating nozzle. The etching solution has a composition that oxidizes the spinning surface, forming a passivation layer thereon. The etching solution further contains reactants for removing the passivation layer exposing the underlying surface to further reaction, leading to the desired etching of the surface. The characteristics of the etching solution are adjusted such that reactant diffusion to lower regions of the surface limits the rate of etching. Faster reaction occurs at higher regions of the surface lying in more rapidly moving etching solution resulting in the desired planarization.

Abstract translation: 本发明描述了用于表面，特别是铜和钽的自旋蚀刻平面化的方法和化学组成。 蚀刻溶液通过喷嘴，优选地是摆动喷嘴与旋转晶片的上表面接触。 蚀刻溶液具有氧化纺丝表面的组成，在其上形成钝化层。 蚀刻溶液还包含用于去除钝化层的反应物，暴露下面的表面进一步反应，导致对表面的所需蚀刻。 调整蚀刻溶液的特性，使得反应物扩散到表面的较低区域限制蚀刻速率。 更快的反应发生在位于更快速移动的蚀刻溶液中的表面的较高区域，导致所需的平坦化。

公开(公告)号：WO00077107A1

公开(公告)日：2000-12-21

申请号：PCT/DE2000/001911

申请日：2000-06-14

IPC: B24B37/04 ,  C09G1/02 ,  C09K3/14 ,  C23F3/00 ,  H01L21/321 ,  H01L21/306

CPC classification number: C23F3/00 ,  B24B37/044 ,  C09G1/02 ,  C09K3/1463 ,  C09K3/1472 ,  H01L21/3212

Abstract: The invention relates to an abrasive solution and a method for chemically-mechanically polishing a precious metal surface. The inertness of the precious metal surface is efficiently reduced by adding a complexing agent.

Abstract translation: 本发明涉及一种研磨溶液和用于化学机械抛光的贵金属表面的方法，所述贵金属表面的惰性被有效地通过加入配位剂的减少。