公开(公告)号：WO2013134410A1

公开(公告)日：2013-09-12

申请号：PCT/US2013/029411

申请日：2013-03-06

Applicant: CROCUS TECHNOLOGY INC.

Inventor： CAMBOU, Bertrand F. ,  LEE, Douglas J. ,  MACKAY, Ken ,  HOBERMAN, Barry

IPC: H01L29/82

CPC classification number: G01D5/12 ,  G01B7/30 ,  G01C17/02 ,  G01D5/16 ,  G01R33/0029 ,  G01R33/096 ,  G01R33/098 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

Abstract: An apparatus includes circuits, a field line configured to generate a magnetic field based on an input, a sensing module configured to determine a parameter of each circuit, and a magnetic field direction determination module configured to determine an angular orientation of the apparatus relative to an external magnetic field based on the parameter. Each circuit includes multiple magnetic tunnel junctions. Each magnetic tunnel junction includes a storage layer having a storage magnetization direction and a sense layer having a sense magnetization direction configured based on the magnetic field. Each magnetic tunnel junction is configured such that the sense magnetization direction and a resistance of the magnetic tunnel junction vary based on the external magnetic field. The parameter varies based on the resistances of the multiple magnetic tunnel junctions. The magnetic field direction determination module is implemented in at least one of a memory or a processing device.

Abstract translation: 一种装置包括电路，被配置为基于输入产生磁场的场线，被配置为确定每个电路的参数的感测模块以及被配置为确定所述装置相对于所述装置的角度定向的磁场方向确定模块 基于参数的外部磁场。 每个电路包括多个磁隧道结。 每个磁性隧道结包括具有存储磁化方向的存储层和具有基于磁场配置的感测磁化方向的感测层。 每个磁性隧道结被配置为使得感应磁化方向和磁性隧道结的电阻基于外部磁场而变化。 该参数根据多个磁性隧道结的电阻而变化。 磁场方向确定模块在存储器或处理装置中的至少一个中实现。

公开(公告)号：WO2013025597A1

公开(公告)日：2013-02-21

申请号：PCT/US2012/050554

申请日：2012-08-13

Applicant: CROCUS TECHNOLOGY, INC. ,  CAMBOU, Bertrand F. ,  LEE, Douglas J. ,  TETHER, Anthony John ,  HOBERMAN, Barry

Inventor： CAMBOU, Bertrand F. ,  LEE, Douglas J. ,  TETHER, Anthony John ,  HOBERMAN, Barry

IPC: G11C15/02

CPC classification number: H01L27/228 ,  G11C5/063 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/5607

Abstract: A memory device includes a first plurality of magnetic random access memory (MRAM) cells positioned along a first direction, and a first bit line electrically connected to the first plurality of MRAM cells, the bit line oriented in the first direction. The device includes a first plurality of field lines oriented in a second direction different from the first direction, the first plurality of field lines being spaced such that only a corresponding first one of the first plurality of MRAM cells is configurable by each of the first plurality of field lines. The device includes a second plurality of field lines oriented in a third direction different from the first direction and the second direction, the second plurality of field lines being spaced such that only a corresponding second one of the first plurality of MRAM cells is configurable by each of the second plurality of field lines.

Abstract translation: 存储器件包括沿着第一方向定位的第一多个磁性随机存取存储器（MRAM）单元，以及电连接到第一多个MRAM单元的第一位线，该位线沿第一方向定向。 所述装置包括沿与第一方向不同的第二方向定向的第一多个场线，所述第一多个场线间隔开，使得仅第一多个MRAM单元中的对应的第一个MRAM单元可由第一多个MRAM单元中的每一个配置 的现场线。 该装置包括在与第一方向和第二方向不同的第三方向上定向的第二多个场线，第二多个场线间隔开，使得仅第一多个MRAM单元中相应的第二个MRAM单元可由每个 的第二多个场线。