公开(公告)号：WO2009121344A3

公开(公告)日：2010-08-05

申请号：PCT/DE2009000431

申请日：2009-04-03

Applicant: CT THERM PHOTOVOLTAICS TECHNOL ,  ROSTAN PHILIPP JOHANNES ,  NUSSBAUMER HARTMUT

Inventor： ROSTAN PHILIPP JOHANNES ,  NUSSBAUMER HARTMUT

IPC: H01L31/0224 ,  H01L31/068 ,  H01L31/18

CPC classification number: H01L31/068 ,  H01L31/022425 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method for producing a solar cell having two-stage doping (20a, 20b; 34a, 34b; 44a, 44b), wherein a doping region (20; 28; 44) of a solar cell substrate (10; 11) is slightly doped (132) at least in some sections, a diffusion barrier (12; 16; 42) is configured (102; 122) in the doping region (20; 28; 44) on a surface of the solar cell substrate (10; 11), local openings (16; 30; 47) are introduced (104; 114; 134) into the diffusion barrier (12; 26; 42), and the solar cell substrate (10; 11) in regions of the local openings (16; 30; 47) is heavily doped (106; 136), wherein the diffusion barrier (12; 26; 42) is thermally grown or applied (102; 122) onto the surface of the solar cell substrate by means of chemical or physical deposition from a vapor phase.

Abstract translation: 一太阳能电池基板的（; 34A，34B; 44A，4'4b 20A，20B），其特征在于，杂质区（44 20; 28），用于生产具有两级掺杂的太阳能电池的方法（10; 11）至少部分地轻掺杂（132 26形成，42）（102），（在杂质区域20;在太阳能电池基板（10的表面上的44）; 28 11）包括扩散阻挡（12 122）（在扩散屏障12; 26; 42）局部 被引入孔（47 16 ;; 30）（104; 114; 134）和所述太阳能电池基板（10; 11）在本地开口区域（16; 30; 47）是重掺杂（106; 136），其中，所述扩散阻挡层（ 42）被热生长或从气相（102 ;; 12,26 122）沉积在Solärzellensubstrats的表面上通过化学或物理沉积装置。

公开(公告)号：WO2010035126A2

公开(公告)日：2010-04-01

申请号：PCT/IB2009006981

申请日：2009-09-28

Applicant: CT THERM PHOTOVOLTAICS TECHNOL ,  NUSSBAUMER HARTMUT

Inventor： NUSSBAUMER HARTMUT

CPC classification number: H01L31/1804 ,  H01L21/67005 ,  H01L21/67173 ,  H01L21/67236 ,  H01L21/67721 ,  H01L21/6776 ,  Y02E10/547 ,  Y02P70/521

Abstract: A diffusion device (1; 28) for the production of solar cells comprises a first dopant source applicator {3) by means of which a dopant source (5) can be disposed on a substrate (7), a first continuous furnace (12) arranged downstream in the process direction (10) through which the substrates (7) can pass, by means of which dopant from the dopant source (5) can be diffused into the substrate (7), and a second continuous furnace (14; 44) arranged downstream of the first continuous furnace (12) in the process direction which is disposed such that a surface passivating layer is formed on the substrates (7) while they pass through the second continuous furnace (14; 44), and an etching device (16) disposed between the first (12) and the second (14; 44) continuous furnace which is arranged to at least partially remove layers formed at the surface of the substrates (7) during the passage through the first continuous furnace (12); and a process for producing solar cells (60).

Abstract translation: 用于生产太阳能电池的扩散装置（1; 28）包括第一掺杂剂源施加器（3），通过该第一掺杂剂源施加器可以将掺杂剂源（5）设置在基板（7）上，第一连续炉（12） 布置在基板（7）可以通过的处理方向（10）的下游，通过该方法可以将来自掺杂剂源（5）的掺杂剂扩散到基板（7）中，以及第二连续炉（14; 44） ）设置在所述第一连续炉（12）的下游，所述处理方向被布置成使得在所述基板（7）通过所述第二连续炉（14; 44）时在所述基板（7）上形成表面钝化层，以及蚀刻装置 （16），设置在第一连续炉（12）和第二连续炉（14; 44）之间，所述连续炉被布置成在通过第一连续炉（12）期间至少部分地去除在基板（7）的表面处形成的层， ; 和太阳能电池（60）的制造方法。

公开(公告)号：WO2005091378A3

公开(公告)日：2006-02-02

申请号：PCT/DE2005000506

申请日：2005-03-18

Applicant: SUNWAYS AG ,  NUSSBAUMER HARTMUT ,  JUNGERMANN HEINZ

Inventor： NUSSBAUMER HARTMUT ,  JUNGERMANN HEINZ

IPC: H01L31/042 ,  H01L31/048 ,  H01L31/052

CPC classification number: H01L31/0547 ,  H01L31/048 ,  Y02B10/12 ,  Y02B10/14 ,  Y02E10/52

Abstract: The invention relates to a modularly mountable solar cell arrangement, particularly for mounting on buildings, comprising solar cells that are encapsulated in mounting modules. To this end, the invention provides that a separate module connection is supplied to each solar cell.

Abstract translation: 本发明涉及的太阳能电池模块安装的结构，特别是用于建筑组件，封装在组装模件的太阳能电池。 提供的是用于每个太阳能电池模块，一个单独的连接而成。