公开(公告)号：WO2014142772A9

公开(公告)日：2015-02-12

申请号：PCT/TR2014000083

申请日：2014-03-14

Applicant: DEMIR HILMI VOLKAN

Inventor： DEMIR HILMI VOLKAN ,  UNAL EMRE ,  GOKYAR SAYIM

IPC: G01R33/28 ,  G01R33/34 ,  G01R33/36

CPC classification number: G01R33/34053 ,  G01R33/286 ,  G01R33/287 ,  G01R33/34007 ,  G01R33/34084 ,  G01R33/3628

Abstract: Embodiments of the present invention address the problems with previously known MRI enhancement resonators. The embodiments provide capacitances that are sufficiently large to result in resonance frequencies that are sufficiently low for medical MRI applications in devices that are sufficiently small for implantation into the body. Further, the capacitance and resonance frequency of the MRI enhancement resonator may be easily adjusted to particular desired values by selecting corresponding thin-film dielectrics, or thicknesses of such thin-film dielectrics. Moreover, the design and geometry of the embodiments provide MRI enhancement resonators with high Q-factors. The construction and material of such MRI enhancement resonators also yield flexible and biocompatible devices that are appropriate for applications involving implantation into the body.

Abstract translation: 本发明的实施例解决了先前已知的MRI增强谐振器的问题。 这些实施例提供足够大的电容，以产生对于植入体内足够小的装置中的医疗MRI应用来说足够低的共振频率。 此外，通过选择相应的薄膜电介质或这种薄膜电介质的厚度，可以容易地将MRI增强谐振器的电容和谐振频率调整到特定的期望值。 此外，实施例的设计和几何形状提供具有高Q因子的MRI增强谐振器。 这种MRI增强谐振器的结构和材料也产生适于涉及植入人体内的应用的柔性和生物相容性装置。

公开(公告)号：WO2014142772A3

公开(公告)日：2014-11-06

申请号：PCT/TR2014000083

申请日：2014-03-14

Applicant: DEMIR HILMI VOLKAN

Inventor： DEMIR HILMI VOLKAN ,  UNAL EMRE ,  GOKYAR SAYIM

IPC: G01R33/28 ,  G01R33/34 ,  G01R33/36

CPC classification number: G01R33/34053 ,  G01R33/286 ,  G01R33/287 ,  G01R33/34007 ,  G01R33/34084 ,  G01R33/3628

Abstract: Embodiments of the present invention address the problems with previously known MRI enhancement resonators. The embodiments provide capacitances that are sufficiently large to result in resonance frequencies that are sufficiently low for medical MRI applications in devices that are sufficiently small for implantation into the body. Further, the capacitance and resonance frequency of the MRI enhancement resonator may be easily adjusted to particular desired values by selecting corresponding thin-film dielectrics, or thicknesses of such thin-film dielectrics. Moreover, the design and geometry of the embodiments provide MRI enhancement resonators with high Q-factors. The construction and material of such MRI enhancement resonators also yield flexible and biocompatible devices that are appropriate for applications involving implantation into the body.

Abstract translation: 本发明的实施例解决了先前已知的MRI增强谐振器的问题。 这些实施例提供足够大的电容，以产生对于植入体内足够小的装置中的医疗MRI应用来说足够低的共振频率。 此外，通过选择相应的薄膜电介质或这种薄膜电介质的厚度，可以容易地将MRI增强谐振器的电容和谐振频率调整到特定的期望值。 此外，实施例的设计和几何形状提供具有高Q因子的MRI增强谐振器。 这种MRI增强谐振器的结构和材料也产生适于涉及植入人体内的应用的柔性和生物相容性装置。