公开(公告)号：WO2016100211A1

公开(公告)日：2016-06-23

申请号：PCT/US2015/065556

申请日：2015-12-14

Applicant: ELWHA LLC

Inventor： BURGER, Douglas C. ,  GATES, William ,  GLEW, Andrew F. ,  HYDE, Roderick A. ,  ISHIKAWA, Muriel Y. ,  KARE, Jordin T. ,  MANFERDELLI, John L. ,  MCWILLIAMS, Thomas M. ,  MUNDIE, Craig J. ,  MYHRVOLD, Nathan P. ,  SMITH, Burton ,  TEGREENE, Clarence T. ,  WEAVER, Thomas Allan ,  WITEK, Richard T. ,  WOOD, Lowell L., Jr. ,  WOOD, Victoria Y.H.

IPC: H01L23/48 ,  H01L23/12

CPC classification number: H01L25/0657 ,  H01L23/34 ,  H01L23/345 ,  H01L23/48 ,  H01L23/5227 ,  H01L23/552 ,  H01L23/645 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  H01L2225/06527 ,  H01L2225/06537 ,  H01L2225/06589 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A non-contacting inductive interconnect of a three-dimensional integrated circuit includes a first silicon substrate having a first inductive loop. A first layer of high permeability material is deposited on the first silicon substrate that has the first inductive loop forming a first high permeability structure. The circuit further includes a second silicon substrate having a second inductive loop. A magnetic coupling is formed between the first inductive loop and the second inductive loop. The first high permeability structure can enhance the magnetic coupling between the first inductive loop and the second inductive loop. In some embodiments, a second layer of the high permeability material is deposited on the second silicon substrate that has the second inductive loop forming a second high permeability structure. The first high permeability structure and the second high permeability structure can form a magnetic circuit coupling the first inductive loop and the second inductive loop.

Abstract translation: 三维集成电路的非接触感应互连包括具有第一感应环路的第一硅衬底。 第一层高磁导率材料沉积在具有形成第一高导磁率结构的第一感应回路的第一硅衬底上。 该电路还包括具有第二感应回路的第二硅衬底。 在第一感应回路和第二感应回路之间形成磁耦合。 第一高导磁率结构可以增强第一感应回路和第二感应回路之间的磁耦合。 在一些实施例中，高导磁率材料的第二层沉积在具有形成第二高导磁率结构的第二感应环的第二硅衬底上。 第一高磁导率结构和第二高磁导率结构可以形成耦合第一感应回路和第二感应回路的磁路。