FLUORINATED COMPOSITIONS FOR ION SOURCE PERFORMANCE IMPROVEMENT IN NITROGEN ION IMPLANTATION
    1.
    发明申请
    FLUORINATED COMPOSITIONS FOR ION SOURCE PERFORMANCE IMPROVEMENT IN NITROGEN ION IMPLANTATION 审中-公开
    用于氮离子注入离子源性能改进的氟化组合物

    公开(公告)号:WO2017196934A1

    公开(公告)日:2017-11-16

    申请号:PCT/US2017/031894

    申请日:2017-05-10

    Applicant: ENTEGRIS, INC.

    Abstract: Compositions, methods, and apparatus are described for carrying out nitrogen ion implantation, which avoid the incidence of severe glitching when the nitrogen ion implantation is followed by another ion implantation operation susceptible to glitching, e.g., implantation of arsenic and/or phosphorus ionic species. The nitrogen ion implantation operation is advantageously conducted with a nitrogen ion implantation composition introduced to or formed in the ion source chamber of the ion implantation system, wherein the nitrogen ion implantation composition includes nitrogen (N 2 ) dopant gas and a glitching-suppressing gas including one or more selected from the group consisting of NF 3 , N 2 F 4 , F 2 , SiF4, WF 6 , PF 3 , PF 5 , AsF 3 , AsF 5 , CF 4 and other fluorinated hydrocarbons of C x F y (x≥1, y≥1) general formula, SF 6 , HF, COF 2 , OF 2 , BF 3 , B 2 F 4 , GeF 4 , XeF 2 , O 2 , N 2 O, NO, NO 2 , N 2 O 4 , and O 3 , and optionally hydrogen-containing gas, e.g., hydrogen-containing gas including one or more selected from the group consisting of H 2 , NH 3 , N 2 H 4 , B 2 H 6 , AsH 3 , PH 3 , SiH 4 , Si 2 H 6 , H 2 S, H 2 Se, CH 4 and other hydrocarbons of C x H y (x≥1, y≥1) general formula and GeH 4 .

    Abstract translation: 描述了用于进行氮离子注入的组合物,方法和设备,其避免了在氮离子注入之后进行另一离子注入操作易受到毛刺影响的严重毛刺的发生,例如植入 砷和/或磷离子物质。 氮离子注入操作有利地利用引入或形成在离子注入系统的离子源室中的氮离子注入组合物来进行,其中氮离子注入组合物包括氮(N 2)掺杂剂气体 以及包含选自由NF 3,N 2,F 4,F 2组成的组中的一种或多种的抑制脉冲的气体 SiF4,WF6,PF3,PF5,AsF3,AsF 5,CF 4和其它C≡FY(x≥1,y≥1)的氟化烃通式 ,SF 6,HF,COF 2,OF 2,BF 3,B 2, subF 4,GeF 4,XeF 2 0,O 2,N 2,...,sub / 2, > O,NO,NO 2,N 2 O 4和O 3,以及任选含有氢的 气体,例如含氢气体,包括选自由以下组成的组中的一种或多种: H 2,NH 3,N 2,H 4,B 2,H 4, AsH 3,PH 3,SiH 4,Si 2 H 的其它烃 > H (x≥1,y≥1)通式和GeH 4

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