公开(公告)号：WO2008131577A1

公开(公告)日：2008-11-06

申请号：PCT/CH2008/000195

申请日：2008-04-29

Applicant: EXALOS AG ,  LAINO, Valerio ,  OCCHI, Lorenzo ,  VELEZ, Christian

Inventor： LAINO, Valerio ,  OCCHI, Lorenzo ,  VELEZ, Christian

IPC: G02B27/10 ,  H01L33/00

CPC classification number: G03B21/005 ,  G02B27/1026 ,  G02B27/1033 ,  G02B27/1046 ,  G02B27/141 ,  G02B27/149 ,  G03B21/2033 ,  G03B21/28 ,  G03B33/12 ,  H04N9/30

Abstract: In accordance with the invention, a display apparatus comprising a light source is provided, said light source comprising at least one superluminescent light emitting diode (SLED), the apparatus further comprising at least one light modulating device arranged in a beam path of a light beam emitted by said light source and operable to emit influenced light upon incidence of said light beam, the light modulating device being operatively connected to an electronic control, the display apparatus further comprising a projection optics arranged in a beam path of said influenced light.

Abstract translation: 根据本发明，提供了一种包括光源的显示装置，所述光源包括至少一个超发光发光二极管（SLED），所述装置还包括至少一个光调制装置，其布置在光束的光束路径中 由所述光源发射并可操作以在所述光束入射时发射受影响的光，所述光调制装置可操作地连接到电子控制器，所述显示装置还包括布置在所述受影响光束的光束路径中的投影光学元件。

公开(公告)号：WO2008131576A1

公开(公告)日：2008-11-06

申请号：PCT/CH2008/000194

申请日：2008-04-29

Applicant: EXALOS AG ,  OCCHI, Lorenzo ,  LAINO, Valerio ,  VELEZ, Christian

Inventor： OCCHI, Lorenzo ,  LAINO, Valerio ,  VELEZ, Christian

IPC: H01L33/00

CPC classification number: H01L33/0045 ,  H01L33/08 ,  H01L33/44

Abstract: In accordance with the invention, a light source for display and/or illumination is provided, the light source comprising a heterostructure including semiconductor layers, the heterostructure forming a waveguide between a first end and a second end, the heterostructure comprising a plurality of layers and comprising an optically active zone formed by the plurality of layers, the optically active zone capable of emitting light guided by said waveguide, at least two different radiative transitions being excitable in the optically active an electrical current between a p-side electrode and an n-side electrode, transition energies of said at least two different radiative transitions corresponding to wavelengths in the visible part of the optical spectrum, the light source further comprising means for preventing reflections of light from the waveguide by at least one of said first and second end back into the waveguide, thereby causing the light source to comprise a superluminescent light emitting diode.

Abstract translation: 根据本发明，提供了一种用于显示和/或照明的光源，所述光源包括包括半导体层的异质结构，所述异质结构在第一端和第二端之间形成波导，所述异质结构包括多个层和 包括由所述多个层形成的光学活性区域，所述光学活性区域能够发射由所述波导管引导的光，至少两个不同的辐射跃迁在所述光学活性中是可激发的，所述电流在p侧电极和n- 所述至少两个不同的辐射跃迁的对应于所述光谱的可见部分中的波长的跃迁能量，所述光源还包括用于通过所述第一和第二端的至少一个背面防止来自所述波导的光的反射的装置 进入波导，从而使光源包括超发光光e 二极管。

公开(公告)号：WO2010022526A2

公开(公告)日：2010-03-04

申请号：PCT/CH2009/000283

申请日：2009-08-26

Applicant: EXALOS AG ,  LAINO, Valerio ,  VELEZ, Christian

Inventor： LAINO, Valerio ,  VELEZ, Christian

IPC: H01L33/00

CPC classification number: H01L33/0045 ,  H01L33/06 ,  H01L33/28 ,  H01L33/30 ,  H01L33/32

Abstract: In accordance with a first aspect of the invention, an optical device is presented, the optical device being a superluminescent light emitting diode or amplifier chip, the optical device comprising a semiconductor quantum well heterostructure embedded in a cladding structure, and a current injector for injecting charge carriers in the heterostructure, so that radiation reaching the heterostructure is amplifiable by stimulated emission. The heterostructure defines a first and a second discrete energy level in a conduction band, the first and second energy levels spaced apart from each other by more than a thermal excitation energy kT w at a working temperature T w of the optical device, with essentially no energy levels between the first and the second energy level, and the higher one of the first and second energy levels being spaced from a conduction energy band of the cladding structure by more than the thermal excitation energy at the working temperature, the optical device further comprising feedback suppressing means.

Abstract translation: 根据本发明的第一方面，提供了一种光学器件，该光学器件是超发光发光二极管或放大器芯片，该光学器件包括嵌入包层结构中的半导体量子阱异质结构，以及用于注入 异质结构中的电荷载体，使得到达异质结构的辐射可以通过受激发射放大。 异质结构限定了导带中的第一和第二离散能级，第一和第二能量级在光学器件的工作温度T w处彼此间隔多于热激发能kT w，基本上没有 第一能级和第二能级之间的能量级别，并且第一和第二能级中较高的一级与包层结构的传导能带间隔超过工作温度下的热激发能，该光学装置还包括 反馈抑制装置。