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1.发明申请
公开(公告)号：WO2021118818A1
公开(公告)日：2021-06-17
申请号：PCT/US2020/062578
申请日：2020-11-30
Applicant: GLOBALWAFERS CO., LTD.
Inventor： LOTTES, Charles R. , THOMAS, Shawn George , ERK, Henry Frank
IPC: H01L21/311 , H01L21/762
Abstract: Methods for removing an oxide film from a silicon-on-insulator structure are disclosed. The oxide may be stripped from a SOI structure before deposition of an epitaxial silicon thickening layer. The oxide film may be removed by dispensing an etching solution toward a center region of the SOI structure and dispensing an etching solution to an edge region of the structure.
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