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1.发明申请
公开(公告)号：WO2020014007A1
公开(公告)日：2020-01-16
申请号：PCT/US2019/039714
申请日：2019-06-28
Applicant: GLOBALWAFERS CO., LTD.
Inventor： STANDLEY, Robert W. , LIBBERT, Jeffrey L. , SREEDHARAMURTHY, Hariprasad , JENSEN, Leif , SEACRIST, Michael R.
IPC: H01L21/762 , H01L21/02
Abstract: A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot.
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