公开(公告)号：WO2014028542A1

公开(公告)日：2014-02-20

申请号：PCT/US2013/054806

申请日：2013-08-13

Applicant: HELIOVOLT CORPORATION

Inventor： SANG, Boasheng ,  LU, Dingyuan ,  MILLER, Roy Mark ,  MARTINEZ, Casiano R. ,  KIM, Minsik ,  MOON, Shang-Sup ,  STANBERY, Billy J.

IPC: H01L21/36 ,  H01L21/02

CPC classification number: H01L31/02363 ,  H01L21/02485 ,  H01L21/02502 ,  H01L21/02568 ,  H01L21/02614 ,  H01L31/1872

Abstract: A technique includes fabricating a layered precursor including: depositing a first film including a first indium gallium selenide compound on a substrate; then depositing a second film including a CuSe compound; then heating the substrate, the first film and the second film to convert the CuSe compound in the second film to a Cu 2-x Se (0.2=

Abstract translation: 一种技术包括制造层状前体，其包括：在基底上沉积包括第一铟镓硒化合物的第一膜; 然后沉积包含CuSe化合物的第二膜; 然后加热衬底，第一膜和第二膜，以将第二膜中的CuSe化合物转化为Cu2-xSe（0.2 =