公开(公告)号：WO2016068980A1

公开(公告)日：2016-05-06

申请号：PCT/US2014/063330

申请日：2014-10-31

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： FOLTIN, Mark ,  YOOCHARN, Jeon ,  BUCHANAN, Brent ,  ORDENTLICH, Erik ,  MURALIMANOHAR, Naveen ,  IGNOWSKI, James S. ,  INGEMI, Jacquelyn M.

IPC: G01C13/00 ,  G11C7/06

CPC classification number: G11C13/004 ,  G11C7/06 ,  G11C13/0038 ,  G11C13/0059 ,  G11C13/0061 ,  G11C13/0069 ,  G11C13/0097 ,  G11C27/024 ,  G11C2013/0045 ,  G11C2013/0054 ,  G11C2207/068

Abstract: This disclosure provides a circuit that includes a ramp generator to apply a voltage ramp to a resistive memory cell. A sensing circuit can enable the ramp generator and monitor a current output received from the resistive memory cell in response to the applied voltage ramp, wherein the sensing circuit compares the current output to a predetermined current threshold to determine the state of the resistive memory cell.

Abstract translation: 本公开提供了一种电路，其包括斜坡发生器以向电阻存储器单元施加电压斜坡。 感测电路可以响应于所施加的电压斜坡使得斜坡发生器能够监视从电阻存储器单元接收的电流输出，其中感测电路将电流输出与预定电流阈值进行比较，以确定电阻性存储单元的状态。