公开(公告)号：WO1993018439A1

公开(公告)日：1993-09-16

申请号：PCT/US1993001746

申请日：1993-02-25

Applicant: HOECHST CELANESE CORPORATION

Inventor： HOECHST CELANESE CORPORATION ,  KHANNA, Dinesh, N. ,  MCKENZIE, Douglas ,  SOBODACHA, Chester, J. ,  DAMMEL, Ralph, R.

IPC: G03F07/022

CPC classification number: G03F7/022 ,  Y10S430/168

Abstract: A photosensitizer comprising a diazo ester of benzolactone ring compound, such as phenolphthalein or cresolphthalein as the backbone, where at least one of the hydroxy groups on benzolactone ring has been esterified with diazo-sulfonyl chloride consisting of 60 to 100 mole % 2,1,4 or 2,1,5-diazo sulfonyl chloride or a mixture thereof, and a photoresist comprising an admixture of the photosensitizer, which is present in the photoresist composition in an amount sufficient to uniformly photosensitize the photoresist composition; a water insoluble, aqueous alkali soluble novolak resin, the novolak resin being present in the photoresist composition in an amount sufficient to form a substantially uniform photoresist composition and a suitable solvent.

公开(公告)号：WO1996021175A1

公开(公告)日：1996-07-11

申请号：PCT/US1995016784

申请日：1995-12-21

Applicant: HOECHST CELANESE CORPORATION

Inventor： HOECHST CELANESE CORPORATION ,  RAHMAN, M., Dalil ,  KHANNA, Dinesh, N. ,  AUBIN, Daniel, P. ,  MCKENZIE, Douglas

IPC: G03F07/023

CPC classification number: G03F7/023 ,  G03F7/0236

Abstract: Process for producing a photosensitizer comprising a diazo ester of a p-cresol oligomer where at least one of the hydroxy groups on the p-cresol ring has been esterified with diazo-sulfonyl chloride comprising from about 60 to 100 mole % 2,1,4 or 2,1,5-diazo sulfonyl chloride, or a mixture thereof; and a photoresist comprising an admixture of the photosensitizer, which is present in the photoresist composition in an amount sufficient to uniformly photosensitize the photoresist composition, a water insoluble, aqueous alkali soluble novolak resin, the novolak resin being present in the photoresist composition in an amount sufficient to form a substantially uniform photoresist composition, and a suitable solvent.

Abstract translation: 制备包含对甲酚低聚物的重氮酯的光敏剂的方法，其中对甲酚环上的至少一个羟基已用重氮磺酰氯酯化，包括约60-100摩尔％2,1,4 或2,1,5-重氮磺酰氯，或其混合物; 以及光致抗蚀剂，其包含光致抗蚀剂组合物中以足以使光致抗蚀剂组合物均匀光敏的量的光敏剂的混合物，水不溶性的碱溶性酚醛清漆树脂，酚醛清漆树脂以光致抗蚀剂组合物的量存在 足以形成基本均匀的光致抗蚀剂组合物和合适的溶剂。

公开(公告)号：WO1996021176A1

公开(公告)日：1996-07-11

申请号：PCT/US1995016785

申请日：1995-12-21

Applicant: HOECHST CELANESE CORPORATION

Inventor： HOECHST CELANESE CORPORATION ,  RAHMAN, M., Dalil ,  AUBIN, Daniel, P. ,  KHANNA, Dinesh, N. ,  MCKENZIE, Douglas

IPC: G03F07/023

CPC classification number: C08G8/04 ,  G03F7/004 ,  Y10S430/106 ,  Y10S438/948

Abstract: The present invention provides methods for producing water insoluble, aqueous alkali soluble, film forming novolak resins having an extremely low level of metal ions, utilizing treated anion and cation exchange resins. A method is also provided for producing photoresist composition having a very low level of metal ions from such novolak resin and for producing semiconductor devices using such photoresist compositions.

Abstract translation: 本发明提供了使用处理过的阴离子和阳离子交换树脂生产具有极低水平金属离子的水不溶性水溶性成膜酚醛清漆树脂的方法。 还提供了一种用于生产具有来自这种酚醛清漆树脂的非常低水平的金属离子并且使用这种光致抗蚀剂组合物制造半导体器件的光致抗蚀剂组合物的方法。