公开(公告)号：WO2021236224A1

公开(公告)日：2021-11-25

申请号：PCT/US2021/023265

申请日：2021-03-19

Applicant: HRL LABORATORIES, LLC

Inventor： SON, Kyung-Ah ,  MOON, Jeong-Sun ,  SEO, Hwa Chang ,  KREMER, Richard M. ,  QUARFOTH, Ryan G. ,  CROWELL, Jack A. ,  TABOADA, Mariano J. ,  DORIA, Joshua M. ,  WELCH, Terry B.

IPC: C30B25/06 ,  C30B25/18 ,  C30B29/30 ,  C30B33/02

Abstract: A process enables growing thick stoichiometric crystalline and preferably IR- transparent optical PCMO material on Si and other substrates. Sputter deposition is carried out in oxygen-free inert gas (e.g., Ar) environment, which helps to prevent decomposition of the PCMO material over the substrate. In the disclosed process, there is no need to add a seed layer prior to PCMO deposition. Moreover, no post-deposition annealing is needed in a high-temperature and high-pressure oxygen furnace, but an anneal provides certain additional benefits in terms of improved transparency at IR wavelengths. Over a long deposition time for a thick PCMO film on the high temperature (≤450°C) substrates, the PCMO deposition is made repeated cycles of deposition of the PCMO material at the high temperature, each deposition cycle being followed by cooling the PCMO-deposited substrate to a substantially lower temperature (