RADIATION DETECTOR WITH CO-PLANAR GRID STRUCTURE
    1.
    发明申请
    RADIATION DETECTOR WITH CO-PLANAR GRID STRUCTURE 审中-公开
    具有共平面网格结构的辐射探测器

    公开(公告)号:WO2008054862A3

    公开(公告)日:2008-07-24

    申请号:PCT/US2007067181

    申请日:2007-04-23

    CPC classification number: H01J47/08

    Abstract: A semiconductor radiation detector (1', 1'', 1''', 1"") includes a body of semiconducting material (2) responsive to ionizing radiation for generating electron-hole pairs in the bulk of said body (2). A conductive cathode (4) is disposed on one side of the body (2) and an anode structure (6) is disposed on the other side of the body (2). The anode structure (6) includes a first set of spaced elongated conductive fingers (8) in contact with the body (2) and defining between each pair of fingers thereof an elongated gap (10) and a second set of spaced elongated conductive fingers (12) positioned above the surface of the body (2) that includes spaced elongated conductive fingers (8). Each finger of the second set of spaced elongated conductive fingers (12) overlays, either partially or wholly, the elongated gap between a pair of adjacent fingers of the first set of spaced elongated conductive fingers (8).

    Abstract translation: 半导体辐射检测器(1',1“,1”,1“”)包括响应于电离辐射的半导体材料体(2),用于在所述主体(2)的主体中产生电子 - 空穴对。 导电阴极(4)设置在主体(2)的一侧,阳极结构(6)设置在主体(2)的另一侧。 阳极结构(6)包括与主体(2)接触并且在其每对指状件之间限定细长间隙(10)和第二组间隔的细长导电指状物(10)的间隔开的细长导电指状物(8) 12),其位于主体(2)的包括间隔开的细长导电指状物(8)的表面之上。 第二组间隔的细长导电指状物(12)的每个手指部分地或全部地覆盖第一组间隔的细长导电指状物(8)的一对相邻指状物之间的细长间隙。

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