公开(公告)号：WO2008054415A2

公开(公告)日：2008-05-08

申请号：PCT/US2006046673

申请日：2006-12-07

Applicant: II VI INC ,  BARRETT DONOVAN L ,  CHEN JIHONG ,  HOPKINS RICHARD H ,  JOHNSON CARL J

Inventor： BARRETT DONOVAN L ,  CHEN JIHONG ,  HOPKINS RICHARD H ,  JOHNSON CARL J

IPC: C30B15/00

CPC classification number: C04B35/573 ,  C01B32/956 ,  C04B2235/422 ,  C04B2235/428 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6584 ,  Y10T428/2982

Abstract: Adsorbed gaseous species and elements in a carbon (C) powder and a graphite crucible are reduced by way of a vacuum and an elevated temperature sufficient to cause reduction. A wall and at least one end of an interior of the crucible is lined with C powder purified in the above manner. An Si + C mixture is formed with C powder purified in the above manner and Si powder or granules. The lined crucible is charged with the Si + C mixture. Adsorbed gaseous species and elements are reduced from the Si + C mixture and the crucible by way of a vacuum and an elevated temperature that is sufficient to cause reduction but which does not exceed the melting point of Si. Thereafter, by way of a vacuum and an elevated temperature, the Si + C mixture is caused to react and form polycrystalline SiC.

Abstract translation: 吸附在碳（C）粉末和石墨坩埚中的气体物质和元素通过真空和足以引起还原的升高的温度被还原。 坩埚内壁和坩埚内部的至少一端用以上述方式纯化的C粉末衬里。 用上述方法纯化的C粉和Si粉或颗粒形成Si + C混合物。 衬里坩埚装有Si + C混合物。 通过真空和足以引起还原但不超过Si熔点的升高温度，从Si + C混合物和坩埚中将吸附的气态物质和元素还原。 之后，通过真空和升高的温度，使Si + C混合物反应并形成多晶SiC。

公开(公告)号：WO2007109029A3

公开(公告)日：2008-04-17

申请号：PCT/US2007006351

申请日：2007-03-13

Applicant: II VI INC ,  BALE DEREK S

Inventor： BALE DEREK S

IPC: G01T1/24

CPC classification number: H04N5/32 ,  H04N5/365 ,  H04N5/367

Abstract: In operation of a photon counting detecting system (10), a number of pulse counts output by least one pixel (20) of a photon counting detector in response to experiencing a photon flux density during a sample interval is acquired and a photon flux density (46) or value related thereto corresponding to the pulse counts output by the pixel (20) is determined. A correction (48) for the thus determined photon flux density (46) or value related thereto is determined. A corrected number of pulse counts (52) is determined for the pixel (20) as a function of the thus determined corrected photon flux density value or value related thereto. An image can be displayed that is a function of the corrected number of pulse counts for pixels of the system.

Abstract translation: 在光子计数检测系统（10）的操作中，获取响应于在采样间隔期间经受光子通量密度而输出光子计数检测器的至少一个像素（20）的脉冲计数，并且获得光子通量密度（ 46）或与像素（20）输出的脉冲计数相关的值。 确定如此确定的光子通量密度（46）或与其相关的值的校正（48）。 根据如此确定的校正光子通量密度值或与其相关的值，为像素（20）确定校正数量的脉冲计数（52）。 可以显示与系统的像素的校正的脉冲计数数的函数的图像。

公开(公告)号：WO2007038710A3

公开(公告)日：2007-06-21

申请号：PCT/US2006037968

申请日：2006-09-27

Applicant: II VI INC ,  ZWIEBACK ILYA ,  BARRETT DONOVAN L ,  GUPTA AVINASH K

Inventor： ZWIEBACK ILYA ,  BARRETT DONOVAN L ,  GUPTA AVINASH K

IPC: C30B25/12 ,  C23C16/44 ,  C30B25/00 ,  C30B25/08 ,  C30B29/36 ,  H01L21/205

CPC classification number: C30B29/36 ,  C30B23/00 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/02576 ,  H01L21/02631

Abstract: In method of crystal growth, an interior of a crystal growth chamber (2) is heated to a first temperature in the presence of a first vacuum pressure whereupon at least one gas absorbed in a material (4) disposed inside the chamber is degassed therefrom. The interior of the chamber is then exposed to an inert gas at a second, higher temperature in the presence of a second vacuum pressure that is at a higher pressure than the first vacuum pressure. The inert gas pressure in the chamber is then reduced to a third vacuum pressure that is between the first and second vacuum pressures and the temperature inside the chamber is lowered to a third temperature that is between the first and second temperatures, whereupon source material (10) inside the chamber vaporizes and deposits on a seed crystal (12) inside the chamber.

Abstract translation: 在晶体生长方法中，晶体生长室（2）的内部在第一真空压力的存在下被加热到第一温度，于是吸收在设置在室内的材料（4）中的至少一种气体从其中被脱气。 然后，在比第一真空压力高的第二真空压力的存在下，腔室的内部在第二较高温度下暴露于惰性气体。 然后将腔室中的惰性气体压力降低至介于第一和第二真空压力之间的第三真空压力，并将腔室内的温度降低至介于第一和第二温度之间的第三温度，于是源材料（10 ）在腔室内蒸发并沉积在晶种（12）上。

公开(公告)号：WO02057807A8

公开(公告)日：2003-11-20

申请号：PCT/US0145284

申请日：2001-10-24

Applicant: II VI INC ,  VYDRIN VIATCHESLAV ,  DAVIS ROBERT K ,  GROSHOLZ JR JOSEPH ,  PARNHAM KEVIN B

Inventor： VYDRIN VIATCHESLAV ,  DAVIS ROBERT K ,  GROSHOLZ JR JOSEPH ,  PARNHAM KEVIN B

IPC: G01T1/17 ,  G01T1/00 ,  G01T1/164 ,  G01T1/20 ,  G01T1/29 ,  H04N5/30

CPC classification number: G01T1/1644 ,  G01T1/1647 ,  G01T1/2928

Abstract: A gamma ray camera A includes a crystal array S which includes a plurality of pixels 4 each of which outputs a pixel signal in response to receiving a gamma ray. A first circuit (6, 8, 10, 12, 14 and 22) outputs for each pixel 4 of the crystal array S, when a pixel signal output by the pixel 4 has a predetermined relation to a reference signal, a threshold signal related to the position of the pixel 4 in the crystal array S. A second circuit (18, 20, 24, 26, 28, 30 and 32) outputs a counter value for each pixel signal having a predetermined relation to its threshold signal. Lastly, a third circuit 34 accumulates for each pixel 4 of the crystal array S a count of the counter values output by the second circuit (18, 20, 24, 26, 28, 30 and 32) for the pixel 4.

Abstract translation: 伽马射线相机A包括晶体阵列S，其包括多个像素4，每个像素4响应于接收伽马射线而输出像素信号。 当由像素4输出的像素信号与参考信号具有预定关系时，第一电路（6,8,10,12,14和22）输出晶体阵列S的每个像素4， 像素4在晶体阵列S中的位置。第二电路（18,20,24,26,28,30和32）输出与其阈值信号具有预定关系的每个像素信号的计数器值。 最后，第三电路34对于晶体阵列S的每个像素4累积由像素4的第二电路（18,20,24,26,28,30和32）输出的计数器值的计数。

公开(公告)号：WO0168957A9

公开(公告)日：2003-01-16

申请号：PCT/US0108047

申请日：2001-03-13

Applicant: II VI INC ,  SNYDER DAVID W ,  EVERSON WILLIAM J

Inventor： SNYDER DAVID W ,  EVERSON WILLIAM J

IPC: C30B29/36 ,  C30B11/14 ,  C30B19/12 ,  C30B23/00 ,  C30B23/02 ,  C30B25/18 ,  C30B29/64 ,  C30B25/04

CPC classification number: C30B23/00 ,  C30B11/14 ,  C30B19/12 ,  C30B23/02 ,  C30B25/18 ,  C30B29/36 ,  C30B29/60

Abstract: Disclosed is a method for reproducibly producing large size, single crystals in a crystal growth chamber. The method includes the steps of: (a) forming a plurality of smaller size tiles of single crystals of substantially the same crystal orientation as the desired large size, single crystal; (b) assembling the plurality of smaller tiles into a structure having a larger size while minimizing gapping between adjacent tiles; (c) placing the assembly of smaller tiles formed in step (b) into a growth chamber; and (d) through a growth reaction carried out in the growth chamber, forming a large size single crystal using the assembly of smaller tiles formed in step (b) as a seed crystal for the growth reaction.

Abstract translation: 公开了一种在晶体生长室中可再现地制造大尺寸单晶的方法。 该方法包括以下步骤：（a）形成多个具有与期望的大尺寸单晶基本相同的晶体取向的较小尺寸的单晶片; （b）将多个较小的瓦片组装成具有较大尺寸的结构，同时最小化相邻瓦片之间的间隙; （c）将在步骤（b）中形成的较小瓦片的组件放置在生长室中; 和（d）通过在生长室中进行的生长反应，使用步骤（b）中形成的较小瓦片的组合形成大尺寸单晶作为生长反应的晶种。

公开(公告)号：WO0168954A2

公开(公告)日：2001-09-20

申请号：PCT/US0107966

申请日：2001-03-13

Applicant: II VI INC ,  SNYDER DAVID W ,  EVERSON WILLIAM J

Inventor： SNYDER DAVID W ,  EVERSON WILLIAM J

IPC: C30B23/06 ,  C30B23/00 ,  C30B25/22 ,  C30B29/36 ,  C30B35/00 ,  H01L21/203 ,  C30B

CPC classification number: C30B23/06 ,  C30B23/00 ,  C30B23/002 ,  C30B29/36 ,  C30B35/00 ,  Y10T117/1032

Abstract: Disclosed is an apparatus and a method for growing single crystals of materials such as silicon carbide through axial gradient transport. A source of the material (10) is placed at one end of a reaction chamber (2) opposite a seed crystal (13). Separate heating elements (16 and 60; 20 and 62) are positioned at opposite ends of the reaction chamber. The reaction chamber (2) is placed in a pressurized growth chamber (26). By appropriately controlling the pressure in the growth chamber (26) and the temperature of the heating elements (16, 20), including the temperature differential therebetween, a uniaxial temperature gradient is generated in the reaction chamber (2). In this manner, substantially planar isotherms are generated and a high quality crystal can be grown through a physical vapor transport process.

Abstract translation: 公开了一种用于通过轴向梯度输送生长单晶材料如碳化硅的装置和方法。 材料源（10）放置在与晶种（13）相对的反应室（2）的一端。 单独的加热元件（16和60; 20和62）位于反应室的相对端。 将反应室（2）放置在加压生长室（26）中。 通过适当地控制生长室（26）中的压力和包括它们之间的温差的加热元件（16,20）的温度，在反应室（2）中产生单轴温度梯度。 以这种方式，产生基本上平面的等温线，并且可以通过物理蒸气传输过程生长高质量的晶体。

公开(公告)号：WO2010077639A3

公开(公告)日：2010-09-10

申请号：PCT/US2009067112

申请日：2009-12-08

Applicant: II VI INC ,  RENGARAJAN VARATHARAJAN ,  ZWIEBACK ILYA ,  NOLAN MICHAEL C ,  BROUHARD BRYAN K

Inventor： RENGARAJAN VARATHARAJAN ,  ZWIEBACK ILYA ,  NOLAN MICHAEL C ,  BROUHARD BRYAN K

IPC: C30B15/14 ,  C30B15/10 ,  C30B29/06

CPC classification number: C30B23/063 ,  C23C14/243 ,  C23C14/26 ,  C23C14/541 ,  C30B23/06 ,  C30B23/066 ,  C30B29/36

Abstract: A crucible has a first resistance heater is disposed in spaced relation above the top of the crucible and a second resistance heater with a first resistive section disposed in spaced relation beneath the bottom of the crucible and with a second resistive section disposed in spaced relation around the outside of the side of the crucible. The crucible is charged with a seed crystal at the top of an interior of the crucible and a source material in the interior of the crucible in spaced relation between the seed crystal and the bottom of the crucible. Electrical power of a sufficient extent is applied to the first and second resistance heaters to create in the interior of the crucible a temperature gradient of sufficient temperature to cause the source material to sublimate and condense on the seed crystal thereby forming a growing crystal.

Abstract translation: 坩埚具有第一电阻加热器，其间隔开地设置在坩埚的顶部之上，第二电阻加热器具有第一电阻部分，第一电阻部分以坩埚底部的间隔设置，并且第二电阻部分间隔设置在坩埚的顶部 在坩埚的侧面之外。 在坩埚的内部的顶部装载坩埚，坩埚内部的源材料以晶种和坩埚的底部间隔开来。 将足够程度的电力施加到第一和第二电阻加热器，以在坩埚内部产生足够温度的温度梯度，以使源材料在晶种上升华和冷凝，从而形成生长晶体。

公开(公告)号：WO2007024302A3

公开(公告)日：2007-11-08

申请号：PCT/US2006018779

申请日：2006-05-16

Applicant: II VI INC ,  SZELES CSABA

Inventor： SZELES CSABA

IPC: G01T1/24

CPC classification number: G01T1/241 ,  H01L27/14658 ,  H01L31/022408 ,  H01L31/1032 ,  H01L31/115 ,  H01L31/1828 ,  Y02E10/543 ,  Y02P70/521

Abstract: The present invention is a radiation detector that includes a crystalline substrate formed of a II-VI compound and a first electrode covering a substantial portion of one surface of the substrate. A plurality of second, segmented electrodes is provided in spaced relation on a surface of the substrate opposite the first electrode. A passivation layer is disposed between the second electrodes on the surface of the substrate opposite the first electrode. The passivation layer can also be positioned between the substrate and one or both of the first electrode and each second electrode. The present invention is also a method of forming the radiation detector.

Abstract translation: 本发明是一种辐射探测器，其包括由II-VI化合物形成的晶体基板和覆盖基板的一个表面的大部分的第一电极。 多个第二分段电极以隔开的关系设置在与第一电极相对的基板的表面上。 钝化层设置在衬底的与第一电极相对的表面上的第二电极之间。 钝化层也可以位于衬底与第一电极和每个第二电极中的一个或两个之间。 本发明也是一种形成辐射探测器的方法。

公开(公告)号：WO2005099388A3

公开(公告)日：2006-09-14

申请号：PCT/US2005011693

申请日：2005-04-06

Applicant: II VI INC ,  KERR THOMAS M ,  MARTIN CHRISTOPHER T ,  STEPKO WALTER R M ,  ANDERSON THOMAS E

Inventor： KERR THOMAS M ,  MARTIN CHRISTOPHER T ,  STEPKO WALTER R M ,  ANDERSON THOMAS E

IPC: H01L21/469 ,  C09G1/02 ,  H01L21/04 ,  H01L21/306

CPC classification number: C09G1/02 ,  H01L21/02024 ,  H01L29/66068

Abstract: A process is taught for producing a smooth, damage-free surface on a SiC wafer, suitable for subsequent epitaxial film growth or ion implantation and semiconductor device fabrication. The process uses certain oxygenated solutions in combination with a colloidal abrasive in order to remove material from the wafer surface in a controlled manner. Hydrogen peroxide with or without ozonated water, in combination with colloidal silica or alumina (or alternatively, in combination with HF to affect the oxide removal) is the preferred embodiment of the invention. The invention also provides a means to monitor the sub-surface damage depth and extent since it initially reveals this damage though the higher oxidation rate and the associated higher removal rate.

Abstract translation: 教导了一种在SiC晶片上产生光滑，无损伤表面的方法，适用于随后的外延膜生长或离子注入和半导体器件制造。 该方法使用某些含氧溶液与胶态研磨剂组合以便以受控的方式从晶片表面去除材料。 含有或不含臭氧化水的过氧化氢与胶体二氧化硅或氧化铝组合（或者与HF组合以影响氧化物去除）是本发明的优选实施方案。 本发明还提供了一种监测次表面损伤深度和程度的方法，因为它最初通过较高的氧化速率和相关的更高的去除速率揭示了这种损伤。

公开(公告)号：WO2008054862A3

公开(公告)日：2008-07-24

申请号：PCT/US2007067181

申请日：2007-04-23

Applicant: II VI INC ,  SOLDNER STEPHEN A

Inventor： SOLDNER STEPHEN A

IPC: G01T1/00 ,  H01L25/04

CPC classification number: H01J47/08

Abstract: A semiconductor radiation detector (1', 1'', 1''', 1"") includes a body of semiconducting material (2) responsive to ionizing radiation for generating electron-hole pairs in the bulk of said body (2). A conductive cathode (4) is disposed on one side of the body (2) and an anode structure (6) is disposed on the other side of the body (2). The anode structure (6) includes a first set of spaced elongated conductive fingers (8) in contact with the body (2) and defining between each pair of fingers thereof an elongated gap (10) and a second set of spaced elongated conductive fingers (12) positioned above the surface of the body (2) that includes spaced elongated conductive fingers (8). Each finger of the second set of spaced elongated conductive fingers (12) overlays, either partially or wholly, the elongated gap between a pair of adjacent fingers of the first set of spaced elongated conductive fingers (8).

Abstract translation: 半导体辐射检测器（1'，1“，1”，1“”）包括响应于电离辐射的半导体材料体（2），用于在所述主体（2）的主体中产生电子 - 空穴对。 导电阴极（4）设置在主体（2）的一侧，阳极结构（6）设置在主体（2）的另一侧。 阳极结构（6）包括与主体（2）接触并且在其每对指状件之间限定细长间隙（10）和第二组间隔的细长导电指状物（10）的间隔开的细长导电指状物（8） 12），其位于主体（2）的包括间隔开的细长导电指状物（8）的表面之上。 第二组间隔的细长导电指状物（12）的每个手指部分地或全部地覆盖第一组间隔的细长导电指状物（8）的一对相邻指状物之间的细长间隙。