公开(公告)号：WO2020068236A1

公开(公告)日：2020-04-02

申请号：PCT/US2019/039826

申请日：2019-06-28

Applicant: INTEL CORPORATION

Inventor： YOUNG, Ian A. ,  KRISHNAMURTHY, Ram ,  MANIPATRUNI, Sasikanth ,  MATHURIYA, Amrita ,  SHARMA, Abhishek A. ,  KUMAR, Raghavan ,  KNAG, Phil ,  SUMBUL, Huseyin ,  CHEN, Gregory

IPC: G06F3/06 ,  H03K3/03 ,  G11C7/10

Abstract: Techniques and mechanisms for a memory device to perform in-memory computing based on a logic state which is detected with a voltage-controlled oscillator (VCO). In an embodiment, a VCO circuit of the memory device receives from a memory array a first signal indicating a logic state that is based on one or more currently stored data bits. The VCO provides a conversion from the logic state being indicated by a voltage characteristic of the first signal to the logic state being indicated by a corresponding frequency characteristic of a cyclical signal. Based on the frequency characteristic, the logic state is identified and communicated for use in an in-memory computation at the memory device. In another embodiment, a result of the in-memory computation is written back to the memory array.