REDUCED STRESS TSV AND INTERPOSER STRUCTURES

    公开(公告)号:WO2013184921A3

    公开(公告)日:2013-12-12

    申请号:PCT/US2013/044519

    申请日:2013-06-06

    Abstract: A component 10 can include a substrate 20 and a conductive via 40 extending within an opening 30. The substrate 20 can have first and second opposing surfaces 21, 22. A dielectric material 60 can be exposed at an inner wall 32 of the opening 30. The conductive via 40 can define a relief channel 55 within the opening 30 adjacent the first surface 21. The relief channel 55 can have an edge 56 within a first distance D1 from the inner wall 32 in a direction D2 of a plane P parallel to and within five microns below the first surface 21, the first distance being the lesser of one micron and five percent of a maximum width of the opening 30 in the plane. The edge 56 can extend along the inner wall 32 to span at least five percent of a circumference of the inner wall.

Patent Agency Ranking