Abstract:
A method for identifying an optimal time for mechanically removing a substrate from a lower electrode in a processing chamber of a plasma processing system is provided. The method includes employing a set of sensors to monitor a set of electrical characteristics of a plasma, wherein the plasma is formed over the substrate during a dechuck event. The method also includes sending processing data about the set of electrical characteristics to a data collection device. The method further includes comparing the processing data against a set of threshold values. The method yet also includes, if the processing data traverses the threshold values, removing the substrate from the lower electrode since a substrate-released event has occurred.
Abstract:
A method and apparatus for compensating a bias voltage at the wafer by measuring RF voltage signals in RF driven plasma including at least an electrostatic chuck (ESC), a capacitive divider, a signal processing and signal conditioning network is disclosed. The bias compensation device includes a capacitive divider to detect the RF voltage at the ESC, a signal conditioning network for the purpose of filtering specific RF signals of interests, and a signal processing unit for computing the DC wafer potential from the filtered RF signals.