METHODS AND ARRANGEMENT FOR DETECTING A WAFER-RELEASED EVENT WITHIN A PLASMA PROCESSING CHAMBER
    1.
    发明申请
    METHODS AND ARRANGEMENT FOR DETECTING A WAFER-RELEASED EVENT WITHIN A PLASMA PROCESSING CHAMBER 审中-公开
    在等离子体处理室内检测晶片释放事件的方法和装置

    公开(公告)号:WO2011031589A3

    公开(公告)日:2011-06-03

    申请号:PCT/US2010047380

    申请日:2010-08-31

    CPC classification number: H01L21/6833 H01J37/32091 H01J37/32935

    Abstract: A method for identifying an optimal time for mechanically removing a substrate from a lower electrode in a processing chamber of a plasma processing system is provided. The method includes employing a set of sensors to monitor a set of electrical characteristics of a plasma, wherein the plasma is formed over the substrate during a dechuck event. The method also includes sending processing data about the set of electrical characteristics to a data collection device. The method further includes comparing the processing data against a set of threshold values. The method yet also includes, if the processing data traverses the threshold values, removing the substrate from the lower electrode since a substrate-released event has occurred.

    Abstract translation: 提供了一种用于识别用于从等离子体处理系统的处理室中的下电极机械地移除衬底的最佳时间的方法。 该方法包括使用一组传感器来监测等离子体的一组电特性,其中在脱钩事件期间等离子体形成在衬底上方。 该方法还包括将关于该组电特性的处理数据发送到数据收集装置。 该方法还包括将处理数据与一组阈值进行比较。 该方法还包括,如果处理数据横越阈值,则由于衬底释放事件已经发生而从下电极移除衬底。

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