公开(公告)号：WO2020033602A1

公开(公告)日：2020-02-13

申请号：PCT/US2019/045583

申请日：2019-08-07

Applicant: LAM RESEARCH CORPORATION

Inventor： SINGHAL, Akhil ,  AUSTIN, Dustin, Zachary ,  HA, Jeongseok ,  LIU, Pei-Chi

IPC: H01L21/02 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/67

Abstract: A method for cleaning SnO 2 residue from a processing chamber is provided as one embodiment. The method embodiment includes introducing hydrocarbon and hydrogen gas at a ratio of l%-60% into a plasma processing system. The SnO 2 residue is etched from surfaces the processing chamber using plasma generated by a plasma source, which produces SnH 4 gas. The SnH4 gas reacts with the hydrocarbon gas to produce an organotin compound that is volatilizable. The method further provides for evacuating the processing chamber of the organotin compound. The introduction of the hydrocarbon gas along with the hydrogen gas at the ratio of l%- 60% reduces a rate of SnH 4 gas decomposition into Sn powder.

公开(公告)号：WO2020036899A1

公开(公告)日：2020-02-20

申请号：PCT/US2019/046243

申请日：2019-08-12

Applicant: LAM RESEARCH CORPORATION

Inventor： SINGHAL, Akhil ,  SHAMMA, Nader ,  AUSTIN, Dustin, Zachary

IPC: H01L21/027 ,  H01L21/02 ,  G03F7/20

Abstract: A method for improving EUV lithographic patterning of SnO 2 layers is provided. One method embodiment includes introducing a hydrophobic surface treatment compound into a processing chamber for modifying a surface of an SnO 2 layer. The modification increases the hydrophobicity of the SnO 2 layer. The method also provides for depositing a photoresist layer on the surface of the SnO 2 layer via spin coating. The modification of the surface of the SnO 2 layer enhances adhesion of contact between the photoresist and the SnO 2 layer during and after spin coating.