公开(公告)号：WO2022020507A1

公开(公告)日：2022-01-27

申请号：PCT/US2021/042626

申请日：2021-07-21

Applicant: LAM RESEARCH CORPORATION

Inventor： SINGHAL, Akhil ,  KANAKASABAPATHY, Sivananda Krishnan

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/3213

Abstract: Methods and apparatuses for performing spacer on spacer multiple patterning schemes using an exhumable first spacer material and a complementary second spacer material. Certain embodiments involve using a tin oxide spacer material for one of the spacer materials in spacer on spacer self aligned multiple patterning.

公开(公告)号：WO2021167809A1

公开(公告)日：2021-08-26

申请号：PCT/US2021/017066

申请日：2021-02-08

Applicant: LAM RESEARCH CORPORATION

Inventor： KANAKASABAPATHY, Sivananda Krishnan ,  SINGHAL, Akhil ,  JENSEN, Alan J. ,  HEO, Seongjun ,  HASAN, Nishat ,  REVURU, Srividya

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/66 ,  H01L21/02 ,  G01N21/71 ,  G01N21/73

Abstract: Methods, apparatus, and systems are provided herein for processing a substrate. Generally, the processing involves Spacer-on-Spacer (SoS) Self-Aligned Quadruple Patterning (SAQP) techniques. The disclosed techniques provide a novel process flow that reduces defects by ensuring that cores are not removed from the substrate until the substrate is transferred to a deposition chamber used to deposit a second spacer layer. This reduces or eliminates the risk of structural damage to features on the substrate while the substrate is being transferred or cleaned. Such structural damage is common when the cores are removed from the substrate prior to cleaning and transfer.

公开(公告)号：WO2021150331A1

公开(公告)日：2021-07-29

申请号：PCT/US2020/065717

申请日：2020-12-17

Applicant: LAM RESEARCH CORPORATION

Inventor： GANANY, Alon ,  AUSTIN, Dustin Zachary ,  BATZER, Rachel ,  SINGHAL, Akhil

IPC: H01J37/32 ,  C23C16/44

Abstract: Processing methods and apparatus for depositing a protective layer on internal surfaces of a reaction chamber are provided. One method may include depositing, while no wafers are present in the reaction chamber having interior surfaces, a first layer of protective material onto the interior surfaces, the interior surfaces comprising a first material, processing, after the depositing the first layer, a portion of a batch of wafers within a reaction chamber, measuring an amount of the first material in the reaction chamber during processing the portion of the batch of wafers, or on one of the wafers in the portion of the batch of wafers, determining that the first amount exceeds a threshold, and depositing, in response to determining that the first amount exceeds the threshold and while no wafers are present in the reaction chamber, a second layer of protective material onto the interior surfaces of the reaction chamber.

公开(公告)号：WO2020036899A1

公开(公告)日：2020-02-20

申请号：PCT/US2019/046243

申请日：2019-08-12

Applicant: LAM RESEARCH CORPORATION

Inventor： SINGHAL, Akhil ,  SHAMMA, Nader ,  AUSTIN, Dustin, Zachary

IPC: H01L21/027 ,  H01L21/02 ,  G03F7/20

Abstract: A method for improving EUV lithographic patterning of SnO 2 layers is provided. One method embodiment includes introducing a hydrophobic surface treatment compound into a processing chamber for modifying a surface of an SnO 2 layer. The modification increases the hydrophobicity of the SnO 2 layer. The method also provides for depositing a photoresist layer on the surface of the SnO 2 layer via spin coating. The modification of the surface of the SnO 2 layer enhances adhesion of contact between the photoresist and the SnO 2 layer during and after spin coating.

公开(公告)号：WO2020081303A1

公开(公告)日：2020-04-23

申请号：PCT/US2019/055264

申请日：2019-10-08

Applicant: LAM RESEARCH CORPORATION

Inventor： SINGHAL, Akhil ,  SMITH, David Charles ,  LEESER, Karl Frederick

IPC: H01L21/02

Abstract: An in situ protective coating is deposited on surfaces of chamber components of a reaction chamber at high temperatures. The in situ protective coating may be deposited at a temperature greater than about 200°C to provide a high quality coating that is resistant to certain types of halogen chemistries, such as fluorine-based species, chlorine-based species, bromine-based species, or iodine-based species. Subsequent coatings or layers may be deposited on the in situ protective coating having different etch selectivities than the underlying in situ protective coating. The in situ protective coating may be deposited throughout the reaction chamber to deposit on surfaces of the chamber components, including on chamber walls.

公开(公告)号：WO2020033602A1

公开(公告)日：2020-02-13

申请号：PCT/US2019/045583

申请日：2019-08-07

Applicant: LAM RESEARCH CORPORATION

Inventor： SINGHAL, Akhil ,  AUSTIN, Dustin, Zachary ,  HA, Jeongseok ,  LIU, Pei-Chi

IPC: H01L21/02 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/67

Abstract: A method for cleaning SnO 2 residue from a processing chamber is provided as one embodiment. The method embodiment includes introducing hydrocarbon and hydrogen gas at a ratio of l%-60% into a plasma processing system. The SnO 2 residue is etched from surfaces the processing chamber using plasma generated by a plasma source, which produces SnH 4 gas. The SnH4 gas reacts with the hydrocarbon gas to produce an organotin compound that is volatilizable. The method further provides for evacuating the processing chamber of the organotin compound. The introduction of the hydrocarbon gas along with the hydrogen gas at the ratio of l%- 60% reduces a rate of SnH 4 gas decomposition into Sn powder.

公开(公告)号：WO2020005487A1

公开(公告)日：2020-01-02

申请号：PCT/US2019/035638

申请日：2019-06-05

Applicant: LAM RESEARCH CORPORATION

Inventor： SINGHAL, Akhil ,  VAN CLEEMPUT, Patrick

IPC: C23C16/455 ,  C23C16/04 ,  C23C16/40 ,  C23C16/458 ,  C23C16/505 ,  H01L21/02

Abstract: An Atomic Layer Deposition (ALD) configured to deposit a metal oxide layer onto an organic photoresist on a substrate using a highly reactive organic metal precursor. By using a highly reactive metal precursor, the rate of growth of the metal oxide layer is very fast, creating a "seal" that effectively protects the organic photoresist from loss and degradation from subsequent exposure to oxygen species during subsequent ALD cycles. The ability to deposit metal oxide layers means metal oxide spacers can be used in multi-patterning, resulting in highly uniform, dense lines, and the elimination of photolithography-etch steps.