公开(公告)号：WO2020172481A1

公开(公告)日：2020-08-27

申请号：PCT/US2020/019134

申请日：2020-02-21

Applicant: LAM RESEARCH CORPORATION

Inventor： BLACHUT, Gregory ,  BATES, Christopher

IPC: G03F7/027 ,  G03F7/033 ,  C08F265/06 ,  C08F216/06 ,  C08F220/18 ,  C08F212/08 ,  C08F212/14 ,  G03F7/20 ,  G03F7/32 ,  H01L21/32

Abstract: Compositions and methods for making photoresists on semiconductor substrates, which may be patterned using EUV. The photoresists comprise a graft polymer comprising a backbone polymer, a side-chain polymer, and an acid-cleavable (acid-labile) linking moiety between the backbone polymer and side-chain polymer. In various photoresists, the Tg of the polymeric side chains after they are cleaved from the graft polymer is lower than the Tg of the graft polymer with the side chains still attached. For example, the Tg of the graft polymer may be from about 80 - 200° C, preferably from about 95 - 140° C.