公开(公告)号：WO2023049463A1

公开(公告)日：2023-03-30

申请号：PCT/US2022/044750

申请日：2022-09-26

Applicant: LAM RESEARCH CORPORATION

Inventor： SIRARD, Stephen M. ,  BLACHUT, Gregory ,  HYMES, Diane

IPC: H01L21/02 ,  H01L21/67

Abstract: Methods of bracing high aspect ratio (HAR) structures include coating the HAR structures with stimulus responsive polymers (SRP) films followed by baking the SRP films at a temperature above the glass transition temperature (Tg) of the SRP film and below the degradation temperature of the SRP. In some embodiments, the SRP film includes a plasticizer.

公开(公告)号：WO2021046572A1

公开(公告)日：2021-03-11

申请号：PCT/US2020/070483

申请日：2020-09-01

Applicant: LAM RESEARCH CORPORATION

Inventor： BLACHUT, Gregory ,  HYMES, Diane ,  SIRARD, Stephen M.

IPC: H01L21/56 ,  C08L61/00 ,  C08L27/18 ,  H01L21/02

Abstract: Formulations for forming stimulus responsive polymers (SRPs) on semiconductor substrates include organic weak acids. Methods of protecting sensitive substrates including forming an SRP layer on sensitive substrates and forming one or more cap layers on the SRP layer.

公开(公告)号：WO2022026323A1

公开(公告)日：2022-02-03

申请号：PCT/US2021/042978

申请日：2021-07-23

Applicant: LAM RESEARCH CORPORATION

Inventor： SIRARD, Stephen M. ,  BLACHUT, Gregory ,  LIMARY, Ratchana ,  HYMES, Diane ,  PAN, Yang

IPC: G03F7/004 ,  G03F7/105 ,  G03F7/20 ,  G03F7/26 ,  G03F7/36 ,  C08L65/00

Abstract: The present disclosure relates to a stimulus responsive polymer (SRP) that includes a homopolymer. Methods, films, and formulations employing an SRP are also described herein.

公开(公告)号：WO2019018159A1

公开(公告)日：2019-01-24

申请号：PCT/US2018/041439

申请日：2018-07-10

Applicant: LAM RESEARCH CORPORATION

Inventor： KAWAGUCHI, Mark ,  BLACHUT, Gregory

IPC: H01L21/02 ,  H01L21/324

Abstract: A method for cleaning a substrate includes supplying a vapor to a processing chamber to grow a polymer film on a substrate in the processing chamber; adding a solution to the polymer film on the substrate to create a viscoelastic fluid on the substrate; and removing the viscoelastic fluid to remove particle contaminants from the substrate.

公开(公告)号：WO2022006349A1

公开(公告)日：2022-01-06

申请号：PCT/US2021/040009

申请日：2021-06-30

Applicant: LAM RESEARCH CORPORATION

Inventor： BLACHUT, Gregory ,  HYMES, Diane ,  SIRARD, Stephen M.

IPC: H01L21/02 ,  H01L21/3105 ,  H01L21/67 ,  H01L21/02118 ,  H01L21/02263 ,  H01L21/02277 ,  H01L21/31127

Abstract: A method includes performing a first substrate treatment on a substrate using a first dry process in a first substrate processing tool operating at vacuum; after the first substrate treatment, depositing a polymer film on an exposed surface of the substrate using a chemical vapor deposition (CVD) process in the first substrate processing tool; removing the substrate from the first substrate processing tool for a queue period; after the queue period, removing the polymer film from the substrate; and performing a second substrate treatment on the substrate using a second dry process in a second substrate processing tool.

公开(公告)号：WO2021231306A1

公开(公告)日：2021-11-18

申请号：PCT/US2021/031594

申请日：2021-05-10

Applicant: LAM RESEARCH CORPORATION

Inventor： SIRARD, Stephen M. ,  BLACHUT, Gregory ,  HYMES, Diane

IPC: H01L21/311 ,  H01L21/02 ,  H01J37/32 ,  C08L61/02

Abstract: Removing stimulus responsive polymers (SRPs) includes exposure to high energy metastable species, generated in a noble gas plasma, at an elevated temperature. The metastable species have sufficient energies and lifetimes to scission bonds on the polymer or other residues. At temperatures greater than the ceiling temperature of the SRP, there is a strong thermodynamic driving force to revert to volatile monomers once bond scissioning has occurred. The metastable species are not chemically reactive and do not appreciably affect the underlying surface. The high energy metastable species are effective at removing residues that remain after exposure to other stimuli such as heat.

公开(公告)号：WO2022056160A1

公开(公告)日：2022-03-17

申请号：PCT/US2021/049713

申请日：2021-09-09

Applicant: LAM RESEARCH CORPORATION

Inventor： BANIK, Stephen J., II ,  BUCKALEW, Bryan L. ,  SIRARD, Stephen M. ,  BLACHUT, Gregory ,  LIMARY, Ratchana ,  HYMES, Diane ,  OBERST, Justin ,  SURESH, Priyanka

IPC: H01L23/00 ,  C08L65/00 ,  C08L71/00

Abstract: The present disclosure relates to use of a stimulus responsive polymer (SRP) as a capping material during direct metal-metal binding. Processes and layers employing an SRP are described herein.

公开(公告)号：WO2021231307A1

公开(公告)日：2021-11-18

申请号：PCT/US2021/031595

申请日：2021-05-10

Applicant: LAM RESEARCH CORPORATION

Inventor： SIRARD, Stephen M. ,  BLACHUT, Gregory ,  HYMES, Diane

IPC: H01L21/311 ,  H01L21/02 ,  C08L61/02

Abstract: Removing a stimuli responsive polymer (SRP) from a substrate includes controlled degradation. In certain embodiments of the methods described herein, removing SRPs includes exposure to two reactants that react to form an acid or base that can trigger the degradation of the SRP. The exposure occurs sequentially to provide more precise top down control. In some embodiments, the methods involve diffusing a compound, or a reactant that reacts to form a compound, only to a top portion of the SRP. The top portion is then degraded and removed, leaving the remaining SRP intact. The exposure and removal cycles are repeated.

公开(公告)号：WO2021046061A1

公开(公告)日：2021-03-11

申请号：PCT/US2020/048955

申请日：2020-09-01

Applicant: LAM RESEARCH CORPORATION ,  THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： BLACHUT, Gregory ,  HYMES, Diane ,  SIRARD, Stephen, M. ,  LIMARY, Ratchana ,  BATES, Christopher, M.

IPC: H01L21/56 ,  C08L65/00 ,  C08G61/02 ,  H01L23/00

Abstract: The present disclosure relates to methods of forming a film including small molecules. Such methods can optionally include removing such small molecules, such as by way of sublimation, evaporation, or conversion to a more volatile form.

公开(公告)号：WO2020172481A1

公开(公告)日：2020-08-27

申请号：PCT/US2020/019134

申请日：2020-02-21

Applicant: LAM RESEARCH CORPORATION

Inventor： BLACHUT, Gregory ,  BATES, Christopher

IPC: G03F7/027 ,  G03F7/033 ,  C08F265/06 ,  C08F216/06 ,  C08F220/18 ,  C08F212/08 ,  C08F212/14 ,  G03F7/20 ,  G03F7/32 ,  H01L21/32

Abstract: Compositions and methods for making photoresists on semiconductor substrates, which may be patterned using EUV. The photoresists comprise a graft polymer comprising a backbone polymer, a side-chain polymer, and an acid-cleavable (acid-labile) linking moiety between the backbone polymer and side-chain polymer. In various photoresists, the Tg of the polymeric side chains after they are cleaved from the graft polymer is lower than the Tg of the graft polymer with the side chains still attached. For example, the Tg of the graft polymer may be from about 80 - 200° C, preferably from about 95 - 140° C.