公开(公告)号：WO2019199697A1

公开(公告)日：2019-10-17

申请号：PCT/US2019/026396

申请日：2019-04-08

Applicant: LAM RESEARCH CORPORATION

Inventor： SRIRAMAN, Saravanapriyan ,  FRIED, David M.

IPC: H01L21/3065 ,  H01L21/027 ,  H01L21/311 ,  G03F7/20 ,  G03F1/80

Abstract: Computer implemented methods and computer program products have instructions for generating transfer functions that relate segments on lithography photomasks to features produced by photolithography and etching using such segments. Such methods may be characterized by the following elements: (a) receiving after development inspection metrology results produced from one or more first test substrates on which resist was applied and patterned using a set of design layout segments; (b) receiving after etch inspection metrology results produced from one or more second test substrates which were etched after resist was applied and patterned using said set of design layout segments; and (c) generating the transfer function using the set of design layout segments together with corresponding after development inspection metrology results and corresponding after etch inspection metrology results.

公开(公告)号：WO2019195481A1

公开(公告)日：2019-10-10

申请号：PCT/US2019/025668

申请日：2019-04-03

Applicant: LAM RESEARCH CORPORATION

Inventor： FENG, Ye ,  MAILFERT, Julien ,  LU, Yang ,  ALDEN, Emily Ann ,  GAO, Lisheng ,  FRIED, David M. ,  SIMON, Daniel Anthony ,  BAILEY III, Andrew D.

IPC: G06F17/50

Abstract: Computer-implemented methods of optimizing a process simulation model that predicts a result of a semiconductor device fabrication operation to process parameter values characterizing the semiconductor device fabrication operation are disclosed. The methods involve generating cost values using a computationally predicted result of the semiconductor device fabrication operation and a metrology result produced, at least in part, by performing the semiconductor device fabrication operation in a reaction chamber operating under a set of fixed process parameter values. The determination of the parameters of the process simulation model may employ pre-process profiles, via optimization of the resultant postprocess profiles of the parameters against profile metrology results. Cost values for, e.g. , optical scatterometry, scanning electron microscopy and transmission electron microscopy may be used to guide optimization.