公开(公告)号：WO2022159278A1

公开(公告)日：2022-07-28

申请号：PCT/US2022/011422

申请日：2022-01-06

Applicant: LAM RESEARCH CORPORATION

Inventor： HAZARIKA, Pankaj Jyotii ,  SAROBOL, Pylin ,  SCHICK, Matthew, Brian ,  TORBATISARRAF, Seyedalireza

IPC: H01L21/687 ,  H01L21/683 ,  C23C16/458 ,  H01J37/32

Abstract: Semiconductor-processing chamber components and methods for making the components are presented. One component includes a base including a metallic material, a metal matrix composite (MMC) layer, and a dielectric layer. The MMC layer at least partially covers the base, and the MMC layer comprises a metallic material as a continuous phase and a non-metallic material as a disperse phase. Further, the MMC layer is formed on the base using solid-state additive manufacturing (SSAM). The dielectric layer is made of a non-metallic material and is directly on the MMC layer.