公开(公告)号：WO2023009336A1

公开(公告)日：2023-02-02

申请号：PCT/US2022/037393

申请日：2022-07-15

Applicant: LAM RESEARCH CORPORATION

Inventor： TAN, Samantha SiamHwa ,  LI, Da ,  YU, Jengyi ,  KIM, Ji Yeon ,  PAN, Yang

IPC: G03F7/20 ,  G03F7/38 ,  G03F7/36 ,  G03F7/004

Abstract: Various embodiments described herein relate to methods, apparatus, and systems for treating metal-containing photoresist to modify material properties of the photoresist. The metal-containing photoresist may be treated in a post-exposure bake process involving at least two thermal operations. At least one of the post-exposure bake operations includes exposing the metal-containing photoresist to a moderately elevated temperature in an oxygen-rich atmosphere. This is followed by a post-exposure bake operation that includes exposing the metal-containing photoresist to a highly elevated temperature in an inert gas atmosphere. The multi-step post-exposure bake operations improves etch electivity in a subsequent dry development process.

公开(公告)号：WO2022212681A1

公开(公告)日：2022-10-06

申请号：PCT/US2022/022790

申请日：2022-03-31

Applicant: LAM RESEARCH CORPORATION

Inventor： PETER, Daniel ,  TAN, Samantha SiamHwa ,  YU, Jengyi ,  LI, Da ,  XUE, Meng ,  CHOI, Wook ,  KIM, Ji Yeon ,  JENSEN, Alan J. ,  LABIB, Shahd Hassan ,  LEE, Younghee ,  ZHAO, Hongxiang

IPC: G03F7/40 ,  H01L21/02 ,  G03F7/36 ,  H01L21/67

Abstract: Various techniques for controlling metal-containing contamination on a semiconductor substrate are provided herein. Such techniques may involve one or more of a post-development bake treatment, a chemical treatment, a plasma treatment, a light treatment, and a backside and bevel edge clean. The techniques may be combined as desired for a particular application. In many cases, the techniques are used to address metal-containing contamination that is generated during a photoresist development operation.