公开(公告)号：WO2022212681A1

公开(公告)日：2022-10-06

申请号：PCT/US2022/022790

申请日：2022-03-31

Applicant: LAM RESEARCH CORPORATION

Inventor： PETER, Daniel ,  TAN, Samantha SiamHwa ,  YU, Jengyi ,  LI, Da ,  XUE, Meng ,  CHOI, Wook ,  KIM, Ji Yeon ,  JENSEN, Alan J. ,  LABIB, Shahd Hassan ,  LEE, Younghee ,  ZHAO, Hongxiang

IPC: G03F7/40 ,  H01L21/02 ,  G03F7/36 ,  H01L21/67

Abstract: Various techniques for controlling metal-containing contamination on a semiconductor substrate are provided herein. Such techniques may involve one or more of a post-development bake treatment, a chemical treatment, a plasma treatment, a light treatment, and a backside and bevel edge clean. The techniques may be combined as desired for a particular application. In many cases, the techniques are used to address metal-containing contamination that is generated during a photoresist development operation.

公开(公告)号：WO2021262371A1

公开(公告)日：2021-12-30

申请号：PCT/US2021/034019

申请日：2021-05-25

Applicant: LAM RESEARCH CORPORATION

Inventor： YU, Jengyi ,  LI, Da ,  LEE, Younghee ,  TAN, Samantha SiamHwa ,  JENSEN, Alan J. ,  XUE, Jun ,  MANUMPIL, Mary Anne

IPC: H01L21/033 ,  G03F7/11 ,  H01L21/67 ,  H01J37/32 ,  G03F7/0042 ,  G03F7/094 ,  G03F7/16 ,  G03F7/167 ,  H01L21/67207 ,  H01L21/68 ,  H01L29/66227

Abstract: Techniques described herein relate to methods, apparatus, and systems for promoting adhesion between a substrate and a metal-containing photoresist. For instance, the method may include receiving the substrate in a reaction chamber, the substrate having a first material exposed on its surface, the first material including a silicon-based material and/or a carbon-based material; generating a plasma from a plasma generation gas source that is substantially free of silicon, where the plasma includes chemical functional groups; exposing the substrate to the plasma to modify the surface of the substrate by forming bonds between the first material and chemical functional groups from the plasma; and depositing the metal-containing photoresist on the modified surface of the substrate, where the bonds between the first material and the chemical functional groups promote adhesion between the substrate and the metal-containing photoresist.

公开(公告)号：WO2020028119A1

公开(公告)日：2020-02-06

申请号：PCT/US2019/043279

申请日：2019-07-24

Applicant: LAM RESEARCH CORPORATION

Inventor： JENSEN, Alan J. ,  LEE, Shih-Ked ,  CHOI, Wook ,  TAN, Samantha SiamHwa ,  COLINJIVADI, Karthik S. ,  LIN, Ran

IPC: H01L21/311 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/768 ,  H01L27/11524 ,  H01L27/108 ,  H01L21/67

Abstract: Features are formed through alternating layers of a first material and a second material by performing an etch process with multiple etch cycles. Each of the etch cycles includes at least a non-selective etch and a selective etch. The non-selective etch etches through at least one or more layers of the first material. The non-selective etch may further etch through one or more layers of the second material and/or partially through a layer of the second material. The selective etch etches through at least a layer of the second material without etching through a layer of the first material. Multiple etch cycles are repeated until a final depth of the features is reached.

公开(公告)号：WO2021202198A1

公开(公告)日：2021-10-07

申请号：PCT/US2021/023901

申请日：2021-03-24

Applicant: LAM RESEARCH CORPORATION

Inventor： KANAKASABAPATHY, Sivananda Krishnan ,  TAN, Samantha S.H. ,  YU, Jengyi ,  LEE, Younghee ,  JENSEN, Alan J. ,  LI, Da

IPC: G03F7/004 ,  G03F7/16 ,  G03F7/20 ,  G03F7/26 ,  H01L21/67

Abstract: The present disclosure relates to stacks having a sensitized resist film, as well as methods and apparatuses for applying such sensitized films. In particular embodiments, the sensitizer can be provided in gas form, and unreacted sensitizer precursors can be recovered after a deposition step.

公开(公告)号：WO2021167809A1

公开(公告)日：2021-08-26

申请号：PCT/US2021/017066

申请日：2021-02-08

Applicant: LAM RESEARCH CORPORATION

Inventor： KANAKASABAPATHY, Sivananda Krishnan ,  SINGHAL, Akhil ,  JENSEN, Alan J. ,  HEO, Seongjun ,  HASAN, Nishat ,  REVURU, Srividya

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/66 ,  H01L21/02 ,  G01N21/71 ,  G01N21/73

Abstract: Methods, apparatus, and systems are provided herein for processing a substrate. Generally, the processing involves Spacer-on-Spacer (SoS) Self-Aligned Quadruple Patterning (SAQP) techniques. The disclosed techniques provide a novel process flow that reduces defects by ensuring that cores are not removed from the substrate until the substrate is transferred to a deposition chamber used to deposit a second spacer layer. This reduces or eliminates the risk of structural damage to features on the substrate while the substrate is being transferred or cleaned. Such structural damage is common when the cores are removed from the substrate prior to cleaning and transfer.

公开(公告)号：WO2020263757A1

公开(公告)日：2020-12-30

申请号：PCT/US2020/038996

申请日：2020-06-22

Applicant: LAM RESEARCH CORPORATION

Inventor： HEO, Seongjun ,  YU, Jengyi ,  LIANG, Chen-Wei ,  JENSEN, Alan J. ,  TAN, Samantha S.H.

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/308 ,  H01L21/02

Abstract: Tin oxide films are used as spacers and hardmasks in semiconductor device manufacturing. In one method, tin oxide layer (e.g., spacer footing) needs to be selectively etched in a presence of an exposed silicon-containing layer, such as SiOC, SiON, SiONC, amorphous silicon, SiC, or SiN. In order to reduce damage to the silicon-containing layer the process involves passivating the silicon-containing layer towards a tin oxide etch chemistry, etching the tin oxide, and repeating passivation and etch in an alternating fashion. For example, passivation and etch can be each performed between 2-50 times. In one implementation, passivation is performed by treating the substrate with an oxygen-containing reactant, activated in a plasma, and the tin oxide etching is performed by a chlorine-based chemistry, such as using a mixture of Cl 2 and BCl 3