公开(公告)号：WO2020236749A1

公开(公告)日：2020-11-26

申请号：PCT/US2020/033461

申请日：2020-05-18

Applicant: LAM RESEARCH CORPORATION

Inventor： ERMEZ, Sema ,  DENG, Ruopeng ,  NISHIOKA, Yutaka ,  BA, Xiaolan ,  GOPINATH, Sanjay ,  DANEK, Michal

IPC: H01L21/285 ,  C23C16/02 ,  C23C16/08 ,  C23C16/455

Abstract: Provided herein are methods of depositing tungsten (W) films without depositing a nucleation layer. In certain embodiments, the methods involve depositing a conformal reducing agent layer of boron (B) and/or silicon (Si) on a substrate. The substrate generally includes a feature to be filled with tungsten with the reducing agent layer conformal to the topography of the substrate including the feature. The reducing agent layer is then exposed to a fluorine-containing tungsten precursor, which is reduced by the reducing agent layer to form a layer of elemental tungsten. The conformal reducing agent layer is converted to a conformal tungsten layer.