公开(公告)号：WO2004061933B1

公开(公告)日：2004-11-25

申请号：PCT/US0341263

申请日：2003-12-24

Applicant: LEXMARK INT INC

Inventor： BELL BYRON VENCENT ,  GUAN YIMIN

IPC: B41J2/14 ,  B41J2/16 ,  H01L21/768 ,  H01L21/4763 ,  H01L23/48

CPC classification number: H01L21/76843 ,  B41J2/14129 ,  B41J2/1601 ,  B41J2/1626 ,  B41J2/1631 ,  B41J2/1646 ,  B41J2202/03 ,  B41J2202/13 ,  H01L21/76865

Abstract: A semiconductor device containing at least one transistor (14) and at least one heater resistor (18) in a heater resistor area adjacent the at least one transistor on a semiconductor substrate (22). The device includes a silicon substrate (22) containing contact openings for metal contacts (34) to the at least one transistor. A barrier layer (42) is in the contact openings and in the heater resistor area and provides a diffusion barrier/heater resistor layer. The barrier layer is selected from a group consisting of TaN, Ta/TaAl, TaN/TaAl, TiWN, TaAlN, TiN, Ta(Nx, Oy), WSi(Nx, Oy), TaSi, TaSiN, WSiN, and TaSi(Nx, Oy). A conductive layer (44) is adjacent at least a portion of the barrier layer for providing connection between a power source and the at least one heater resistor and at least one transistor. The semiconductor device is devoid of a patterned and etched barrier layer in the heater resistor area.

Abstract translation: 一种半导体器件，在半导体衬底（22）上的与至少一个晶体管相邻的加热器电阻器区域中包含至少一个晶体管（14）和至少一个加热电阻器（18）。 该器件包括硅衬底（22），该硅衬底包含用于与至少一个晶体管的金属触点（34）的接触开口。 阻挡层（42）位于接触开口中和加热电阻器区域中，并提供扩散阻挡层/加热器电阻层。 阻挡层选自由TaN，Ta / TaAl，TaN / TaAl，TiWN，TaAlN，TiN，Ta（Nx，Oy），WSi（Nx，Oy），TaSi，TaSiN，WSiN和TaSi（Nx ，Oy）。 导电层（44）与阻挡层的至少一部分相邻，用于提供电源与至少一个加热器电阻器和至少一个晶体管之间的连接。 半导体器件在加热器电阻器区域中没有图案化和蚀刻的阻挡层。