公开(公告)号：WO2013187751A1

公开(公告)日：2013-12-19

申请号：PCT/MY2013/000101

申请日：2013-05-27

Applicant: MIMOS BERHAD

Inventor： MOHD, Hezri Abu Bakar ,  ANIFAH, Zakaria ,  FADZILAH, Arifin ,  MOHD, Hilmy Azuan Hamzah

IPC: H01L21/336 ,  H01L29/423

CPC classification number: H01L29/7813 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/66734

Abstract: A method of fabrication of an oxide layer at the bottom of a trench in a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is provided. The method includes deposition of a pad oxide layer on a semiconductor substrate of the MOSFET; etching the pad oxide layer and the semiconductor substrate to form a trench in the semiconductor substrate, depositing a silicone oxide layer to fill the trench in the semiconductor substrate; etching the silicone oxide layer to remove the silicone oxide layer from a plurality of sidewalls of the trench; coating the silicone substrate and silicone oxide layer with a photoresist to protect them of etching; etching the photoresist and the silicone oxide layer until surface of the silicone substrate is reached; and removing the photoresist from inside the trench to obtain a thick bottom oxide (TBO) layer in the trench.

Abstract translation: 提供了在金属氧化物半导体场效应晶体管（MOSFET）中在沟槽的底部制造氧化物层的方法。 该方法包括在MOSFET的半导体衬底上沉积衬垫氧化物层; 蚀刻所述衬垫氧化物层和所述半导体衬底以在所述半导体衬底中形成沟槽，沉积氧化硅氧化物层以填充所述半导体衬底中的所述沟槽; 蚀刻硅氧烷层以从沟槽的多个侧壁去除氧化硅氧化物层; 用光致抗蚀剂涂覆硅树脂基底和硅氧烷氧化物层以保护它们的蚀刻; 蚀刻光致抗蚀剂和氧化硅氧化物层，直到达到硅树脂基底的表面; 并且从沟槽内部去除光致抗蚀剂以在沟槽中获得厚的底部氧化物（TBO）层。