公开(公告)号：WO1992003851A1

公开(公告)日：1992-03-05

申请号：PCT/US1991005774

申请日：1991-08-14

Applicant: NORTH CAROLINA STATE UNIVERSITY

Inventor： NORTH CAROLINA STATE UNIVERSITY ,  MISHRA, Umesh, K.

IPC: H01L29/90

CPC classification number: B82Y15/00 ,  H01J1/308

Abstract: A planar doped barrier region of semiconductor material is coupled to a vacuum or gaseous region to provide electron emission from the planar doped barrier region into the vacuum or gaseous region. When a voltage is applied across the planar doped barrier region electrons flow from one end of the region to another. This flow results in the emission of electrons if the work function of the emission surface is less than the handgap of the semiconductor material. The device of the present invention can be used as a vacuum microelectronic emitter, a vacuum microelectronic transistor, light source, klystron, or travelling wave tube.