公开(公告)号：WO2016007326A1

公开(公告)日：2016-01-14

申请号：PCT/US2015/038496

申请日：2015-06-30

Applicant: NUVOSUN, INC.

Inventor： WALL, Arthur, C. ,  PAULSON, Puthur ,  PERSON, Donald ,  HOLLARS, Dennis ,  HACHTMANN, Bruce, D.

IPC: H01L31/0392 ,  H01L31/0445

CPC classification number: H01L31/03928 ,  C23C14/16 ,  C23C14/5866 ,  C23C16/06 ,  C23C16/56 ,  H01L21/02425 ,  H01L21/02568 ,  H01L21/02614 ,  H01L31/0445 ,  Y02E10/541 ,  Y02P70/521

Abstract: Example apparatus provide a conductive back contact layer and methods for making the same. An example method may include (a) providing a conductive substrate having a first side and a second side, (b) applying at least one pre-reaction layer to the second side of the substrate, wherein the pre-reaction layer comprises a conductive material, (c) exposing the at least one pre-reaction layer to a selenium-or sulfur-containing vapor, and (d) applying at least one layer of conductive oxidation-resistant material to the second side.

Abstract translation: 示例性装置提供导电性背接触层及其制造方法。 示例性方法可以包括（a）提供具有第一侧和第二侧的导电基底，（b）将至少一个预反应层施加到基底的第二侧，其中预反应层包含导电材料 ，（c）将至少一个预反应层暴露于含硒或含硫蒸汽，和（d）向第二面施加至少一层导电抗氧化材料。