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公开(公告)号：WO2018183585A1
公开(公告)日：2018-10-04
申请号：PCT/US2018/024978
申请日：2018-03-28
Applicant: PALLIDUS, INC.
Inventor： DUKES, Douglas , SANDGREN, Glenn , HOPKINS, Andrew, R. , BURLINGHAM, Isabel , LAND, Mark, S.
IPC: C04B35/515 , C04B35/64 , C08G77/20
Abstract: Volumetric shapes of SiC starting materials for boule growth. Methods of controlling vapor deposition growth of SiC boules, and providing directional flux. Methods of increase the number of wafers, the number of electronic components and the number of operable devices from a single boule growth cycle.
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