公开(公告)号：WO2023283474A1

公开(公告)日：2023-01-12

申请号：PCT/US2022/036606

申请日：2022-07-09

Applicant: PALLIDUS, INC.

Inventor： HANSEN, Darren ,  DUKES, Douglas ,  LOBODA, Mark ,  LAND, Mark ,  ROJO, Juan, Carlos ,  TORRES, Victor

IPC: H01L21/02 ,  C01B32/963

Abstract: A doped SiOC liquid starting material provides a p-type polymer derived ceramic SiC crystalline materials, including boules and wafers. P-type SiC electronic devices. Low resistivity SiC crystals, wafers and boules, having phosphorous as a dopant. Polymer derived ceramic doped SiC shaped charge source materials for vapor deposition growth of doped SiC crystals.

公开(公告)号：WO2023283472A1

公开(公告)日：2023-01-12

申请号：PCT/US2022/036597

申请日：2022-07-09

Applicant: PALLIDUS, INC.

Inventor： HANSEN, Darren ,  DUKES, Douglas ,  LOBODA, Mark ,  LAND, Mark ,  ROJO, Juan Carlos ,  TORRES, Victor

IPC: H01L21/02 ,  C01B32/963

Abstract: A doped SiOC liquid starting material provides a p-type polymer derived ceramic SiC crystalline materials, including boules and wafers. P-type SiC electronic devices. Low resistivity SiC crystals, wafers and boules, having phosphorous as a dopant. Polymer derived ceramic doped SiC shaped charge source materials for vapor deposition growth of doped SiC crystals.

公开(公告)号：WO2023283471A1

公开(公告)日：2023-01-12

申请号：PCT/US2022/036595

申请日：2022-07-09

Applicant: PALLIDUS, INC.

Inventor： HANSEN, Darren ,  DUKES, Douglas ,  LOBODA, Mark ,  LAND, Mark ,  ROJO, Juan, Carlos ,  TORRES, Victor

IPC: C04B35/565 ,  C04B35/524 ,  C04B35/571 ,  C01B32/956 ,  B28B11/24 ,  B01J2/06

Abstract: A doped SiOC liquid starting material provides a p-type polymer derived ceramic SiC crystalline materials, including boules and wafers. P-type SiC electronic devices. Low resistivity SiC crystals, wafers and boules, having phosphorous as a dopant. Polymer derived ceramic doped SiC shaped charge source materials for vapor deposition growth of doped SiC crystals.

公开(公告)号：WO2018183585A1

公开(公告)日：2018-10-04

申请号：PCT/US2018/024978

申请日：2018-03-28

Applicant: PALLIDUS, INC.

Inventor： DUKES, Douglas ,  SANDGREN, Glenn ,  HOPKINS, Andrew, R. ,  BURLINGHAM, Isabel ,  LAND, Mark, S.

IPC: C04B35/515 ,  C04B35/64 ,  C08G77/20

Abstract: Volumetric shapes of SiC starting materials for boule growth. Methods of controlling vapor deposition growth of SiC boules, and providing directional flux. Methods of increase the number of wafers, the number of electronic components and the number of operable devices from a single boule growth cycle.