公开(公告)号：WO9531830A3

公开(公告)日：1996-01-04

申请号：PCT/IB9500292

申请日：1995-04-24

Applicant: PHILIPS ELECTRONICS NV ,  PHILIPS NORDEN AB

Inventor： MENSZ PIOTR

IPC: H01L29/221 ,  H01L29/267 ,  H01L33/00 ,  H01L33/28 ,  H01S5/00 ,  H01S5/042 ,  H01S5/327 ,  H01S5/347

CPC classification number: H01L33/28 ,  B82Y20/00 ,  H01L29/221 ,  H01L29/267 ,  H01L33/0087 ,  H01S5/0421 ,  H01S5/327 ,  H01S5/347

Abstract: Known semiconductor structures emitting blue light have a limited efficiency. It is the purpose of the present invention to obtain such a structure which is suitable for diodes and diode lasers in particular and which has an improved efficiency. According to the invention such a semiconductor structure comprises a first layer of a p-type II-VI compound of the formula: ZnxQ1-xSySe1-y wherein Q is an element selected from the group consisting of Mg, Cd and Mn, 0.5 « x « 1 and 0 « y « 1 and a substrate X of p-type GaAs, said first layer and said substrate being separated by a series of thin epitaxial undoped or p-doped layers of a total thickness of up to 2 νm and each layer of a thickness of 2 to 200 nm contacting opposing surfaces of said substrate and said first layer. Said series of layers comprise: a layer of In0.5Al0.5P contacting the opposing surface of said first layer, a layer of a compound selected from the group consisting of In0.5Ga0.5P and AlxGa1-xAs wherein x = 0.1 - 0.3 contacting the opposing surface of said substrate, a layer of In0.5Ga0.5P contacting said layer of AlxGa1-xAs and at least one layer of In0.5AlzGa0.5-zP wherein 0