公开(公告)号：WO2015186033A1

公开(公告)日：2015-12-10

申请号：PCT/IB2015/054053

申请日：2015-05-29

Applicant: FONDAZIONE ISTITUTO ITALIANO DI TECNOLOGIA

Inventor： MOREELS, Iwan Philemon Wilhelmus Remy Roger ,  GRIM, Joel Quedar Ge Tian Chi ,  CHRISTODOULOU, Sotirios ,  DI STASIO, Francesco ,  KRAHNE, Roman Mark ,  MANNA, Liberato ,  CINGOLANI, Roberto

IPC: H01S3/16 ,  H01S5/10 ,  H01S5/34 ,  H01S5/347 ,  B82Y20/00 ,  H01S5/125

CPC classification number: H01S5/347 ,  B82Y20/00 ,  H01S3/169 ,  H01S5/041 ,  H01S5/105 ,  H01S5/1067 ,  H01S5/125 ,  H01S5/341

Abstract: Laser device characterized in that it comprises, as gain medium, a film of colloidal nanocrystals of semiconductor material, wherein said nanocrystals are two-dimensional nanocrystals suitable for forming quantum wells for confinement of the charge carriers in the nanocrystals and having a biexciton gain mechanism.

Abstract translation: 激光装置的特征在于，其包括作为增益介质的半导体材料的胶体纳米晶体的膜，其中所述纳米晶体是适于形成量子阱的二维纳米晶体，用于限制纳米晶体中的载流子并具有增益增益机制。

公开(公告)号：WO2010027648A1

公开(公告)日：2010-03-11

申请号：PCT/US2009054140

申请日：2009-08-18

Applicant: 3M INNOVATIVE PROPERTIES CO ,  HAASE MICHAEL A ,  MILLER THOMAS J ,  SUN XIAOGUANG

Inventor： HAASE MICHAEL A ,  MILLER THOMAS J ,  SUN XIAOGUANG

IPC: H01S5/04 ,  H01S5/183 ,  H01S5/347

CPC classification number: H01S5/041 ,  B82Y20/00 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/024 ,  H01S5/1039 ,  H01S5/14 ,  H01S5/18308 ,  H01S5/2009 ,  H01S5/2022 ,  H01S5/2027 ,  H01S5/309 ,  H01S5/347 ,  H01S5/423 ,  H01S2301/18

Abstract: Light sources are disclosed. A disclosed light source includes a III-V based pump light source (170) that includes nitrogen and emits light at a first wavelength. The light source further includes a vertical cavity surface emitting laser (VCSEL) that converts at least a portion of the first wavelength light (174) emitted by the pump light surce (170) to at least a partially coherent light at a second wavelength (176). The VCSEL includes first and second mirrors (120, 160) that form an optical cavity for light at the second wavelength. The first mirror (120) is substantially reflective at the second wavelength and includes a first multilayer slfack. The second mirror (160) is substantially transmissive at the first wavelength and partially reflective and partially transmissive at the second wavelength. The second mirror includes a second multilayer stack. The VCSEL further includes a semiconductor multilayer stack (130) that is disposed between the first and second mirrors and converts at least a portion of the first wavelength light to the second wavelength light. The semiconductor multilayer stack (130) includes a quantum well that includes a Cd(Mg)ZnSe alloy.

Abstract translation: 公开了光源。 所公开的光源包括包含氮并发射第一波长的光的基于III-V的泵浦光源（170）。 光源还包括垂直腔表面发射激光器（VCSEL），其将由泵浦光线（170）发射的第一波长光（174）的至少一部分转换成至少部分相干的第二波长的光（176 ）。 VCSEL包括为第二波长的光形成光腔的第一和第二反射镜（120,160）。 第一反射镜（120）在第二波长处基本上是反射的，并且包括第一多层悬置。 第二反射镜（160）在第一波长处是基本上透射的，并且在第二波长处是部分反射和部分透射的。 第二反射镜包括第二多层叠层。 VCSEL还包括设置在第一和第二反射镜之间并将第一波长光的至少一部分转换成第二波长光的半导体多层堆叠（130）。 半导体多层堆叠（130）包括包含Cd（Mg）ZnSe合金的量子阱。

公开(公告)号：WO2006009782A3

公开(公告)日：2007-05-31

申请号：PCT/US2005021317

申请日：2005-06-17

Applicant: ON INTERNATIONAL INC ,  BURGENER II ROBERT H ,  FELIX ROGER L ,  RENLUND GARY M

Inventor： BURGENER II ROBERT H ,  FELIX ROGER L ,  RENLUND GARY M

IPC: H01L29/12 ,  C01G9/02 ,  H01L21/00 ,  H01L21/20 ,  H01L21/28 ,  H01L21/31 ,  H01L21/3115 ,  H01L21/316 ,  H01L21/363 ,  H01L21/365 ,  H01L21/469 ,  H01L23/58 ,  H01L27/15 ,  H01L29/225 ,  H01L29/26 ,  H01L31/0296 ,  H01L31/0328 ,  H01L31/12 ,  H01L33/28 ,  H01S5/30 ,  H01S5/327 ,  H01S5/347

CPC classification number: H01L33/28 ,  B82Y20/00 ,  C01G9/02 ,  C01P2006/40 ,  C30B25/02 ,  C30B29/16 ,  C30B29/48 ,  H01L21/02551 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02568 ,  H01L21/02579 ,  H01L21/3115 ,  H01L21/316 ,  H01L23/5329 ,  H01L29/225 ,  H01L31/02963 ,  H01L33/025 ,  H01L33/285 ,  H01L2924/0002 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/327 ,  H01S5/347 ,  H01L2924/00

Abstract: A persistent p-type group II-VI semiconductor material is disclosed containing atoms of group II elements, atoms of group VI elements, and a p-type dopant which replaces atoms of the group VI element in the semiconductor material. The p-type dopant has a negative oxidation state. The p-type dopant causes formation of vacancies of atoms of the group II element in the semiconductor material. Fabrication methods and solid state devices containing the group II-VI semiconductor material are disclosed.

Abstract translation: 公开了一种持续性的p型II-VI族半导体材料，其包含II族元素的原子，VI族元素的原子和替代半导体材料中的VI族元素的原子的p型掺杂剂。 p型掺杂剂具有负氧化态。 p型掺杂剂引起半导体材料中II族元素的原子空位的形成。 公开了含有II-VI族半导体材料的制造方法和固态器件。

公开(公告)号：WO9639733A3

公开(公告)日：1997-02-06

申请号：PCT/IB9600491

申请日：1996-05-23

Applicant: PHILIPS ELECTRONICS NV ,  PHILIPS NORDEN AB

Inventor： HABERERN KEVIN W

IPC: H01S5/00 ,  H01S5/042 ,  H01S5/20 ,  H01S5/327 ,  H01S5/34 ,  H01S5/347 ,  H01S3/19

CPC classification number: B82Y20/00 ,  H01S5/0421 ,  H01S5/20 ,  H01S5/2059 ,  H01S5/2063 ,  H01S5/327 ,  H01S5/3403 ,  H01S5/347

Abstract: A blue, green or blue-green stripe-geometry II/VI semiconductor injection laser utilizing a Zn1-uCduSe active layer (quantum well) having Zn1-uMgxSySe1-y cladding layers and ZnSxSe1-z guiding layers is fabricated on a GaAs substrate. The stripe-geometry configuration is obtained by ion implanting a dopant such as Nitrogen or Oxygen into the structure to form blocking layer portions of higher resistivity in the second cladding layer and the second guiding cladding layer. These blocking layer portions are positioned on both sides of, and thereby define, a stripe-shaped lateral confinement region of lower resistivity in the second cladding layer and the second guiding cladding layer.

公开(公告)号：WO9221170A3

公开(公告)日：1993-03-04

申请号：PCT/US9203782

申请日：1992-05-12

Applicant: MINNESOTA MINING & MFG

Inventor： HAASE MICHAEL A ,  CHENG HWA ,  DEPUYDT JAMES M ,  QIU JUN

IPC: H01L21/363 ,  H01L21/28 ,  H01L29/43 ,  H01L33/00 ,  H01L33/14 ,  H01L33/28 ,  H01L33/38 ,  H01L33/40 ,  H01S5/00 ,  H01S5/042 ,  H01S5/22 ,  H01S5/223 ,  H01S5/30 ,  H01S5/32 ,  H01S5/327 ,  H01S5/34 ,  H01S5/347 ,  H01S3/19 ,  H01L21/443

CPC classification number: H01L33/40 ,  B82Y20/00 ,  H01L33/0087 ,  H01L33/145 ,  H01L33/28 ,  H01L33/285 ,  H01L33/38 ,  H01L2924/0002 ,  H01S5/0421 ,  H01S5/2213 ,  H01S5/2231 ,  H01S5/3059 ,  H01S5/3068 ,  H01S5/327 ,  H01S5/3403 ,  H01S5/347 ,  H01L2924/00

Abstract: A II-VI compound semiconductor laser diode (10) is formed from overlaying layers of material including an n-type single crystal semiconductor substrate (12), adjacent n-type and p-type guiding lasers (14) and (16) of II-VI semiconductor forming a pn junction, a quantum well active layer (18) of II-VI semiconductor between the guiding layers (14) and (16), first electrode (32) opposite the substrate (12) from the n-type guiding layer (14), and a second electrode (30) opposite the p-type guiding layer (16) from the quantum well layer (18). Electrode layer (30) is characterized by a Fermi energy. A p-type ohmic contact layer (26) is doped, with shallow acceptors having a shallow acceptor energy, to a net acceptor concentration of at least 1 x 1017 cm-3, and includes sufficient deep energy states between the shallow acceptor energy and the electrode layer Fermi energy to enable cascade tunneling by charge carriers.

公开(公告)号：WO2022254770A1

公开(公告)日：2022-12-08

申请号：PCT/JP2022/000931

申请日：2022-01-13

Applicant: ソニーグループ株式会社

Inventor： 長根　昭悦 ,  濱口　達史 ,  仲山　英次 ,  林　賢太郎 ,  川西　秀和 ,  幸田　倫太郎

IPC: G03F7/20 ,  H01L33/22 ,  H01L33/30 ,  H01L33/32 ,  H01S5/183 ,  H01S5/343 ,  H01S5/347

Abstract: 【課題】生産性に優れ、電流注入領域とレンズの位置合わせを高精度に行うことが可能な半導体発光素子及び半導体発光素子の製造方法を提供すること。 【解決手段】本技術に係る発光素子の製造方法は、第１の主面と、上記第１の主面とは反対側の第２の主面を有する基板の上記第１の主面側に露光波長に対して不透明な構造である遮光構造を形成し、上記基板の上記第２の主面側に感光材料からなる感光層を形成し、上記第１の主面側から上記基板に、上記露光波長を有する光を照射し、上記感光層を上記遮光構造に応じたパターンに形成し、上記感光層を用いてレンズを形成する。

公开(公告)号：WO2005114282A3

公开(公告)日：2006-06-08

申请号：PCT/US2005017029

申请日：2005-05-13

Applicant: UNIV CALIFORNIA ,  YANG PEIDONG ,  LAW MAT ,  SIRBULY DONALD J ,  JOHNSON JUSTIN C ,  SAYKALLY RICHARD

Inventor： YANG PEIDONG ,  LAW MAT ,  SIRBULY DONALD J ,  JOHNSON JUSTIN C ,  SAYKALLY RICHARD

IPC: G02B6/12 ,  G02B6/10 ,  H01S5/04 ,  H01S5/10 ,  H01S5/323 ,  H01S5/34 ,  H01S5/347

CPC classification number: G02B6/107 ,  B82Y20/00 ,  H01S5/041 ,  H01S5/1042 ,  H01S5/32341 ,  H01S5/3401 ,  H01S5/341 ,  H01S5/347

Abstract: Nanoribbons 40 and nanowires 38 having diameters less than the wavelength of light, as shown for example in Fig. 7B, are used in the formation of optical circuits and devices. Such nano structures function as subwavelength optical waveguides which form a fundamental building block for optical integration. The extraordinary length, flexibility and strength of these structures enable their manipulation on surfaces, including the precise positioning and optical linking of nanoribbon/wire waveguides 40, 38 and other nanoribbon/wire elements to form optical networks and devices. In addition, such structures provide for waveguiding in liquids, enabling them to further be used in other applications such as optical probes and sensors.

Abstract translation: 直径小于光波长的纳米带40和纳米线38，如图1所示。 7B用于形成光电路和器件。 这种纳米结构用作亚波长光波导，其形成用于光学集成的基本构建块。 这些结构的非凡长度，灵活性和强度使得它们能够对表面进行操纵，包括纳米棒/导线波导40,38和其它纳米棒/线元件的精确定位和光学连接以形成光网络和设备。 此外，这种结构提供液体中的波导，使得它们能够进一步用于其它应用中，例如光学探针和传感器。

公开(公告)号：WO2005124948A3

公开(公告)日：2006-03-30

申请号：PCT/US2005018738

申请日：2005-05-27

Applicant: COHERENT INC ,  SPINELLI LUIS A ,  ZHOU HAILONG ,  AUSTIN RUSSEL R

Inventor： SPINELLI LUIS A ,  ZHOU HAILONG ,  AUSTIN RUSSEL R

IPC: H01S5/347 ,  H01S3/0941 ,  H01S5/00 ,  H01S5/04 ,  H01S5/14 ,  H01S5/183 ,  H01S5/343 ,  H01S5/40

CPC classification number: B82Y20/00 ,  H01S3/094057 ,  H01S3/0941 ,  H01S5/005 ,  H01S5/041 ,  H01S5/141 ,  H01S5/183 ,  H01S5/34333 ,  H01S5/347 ,  H01S5/4025

Abstract: A semiconductor laser includes a multilayer semiconductor laser heterostructure including at least one active layer of a II-VI semiconductor material (26) and is optically pumped by one or more indium gallium nitride (InGaN) diode-lasers (38). Group II elements in the II-VI semiconductor material are zinc, cadmium, magnesium, beryllium, strontium, and barium. Group VI elements in the II-VI semiconductor material are Sulfur, Selenium, and Tellurium. In one example of the laser an edge emitting heterostructure includes two active layers of zinc cadmium selenide, two waveguide layers of zinc magnesium sulfoselenide, and two cladding layers, also of zinc magnesium sulfoselenide. Proportions of elements in the cladding layer material and the waveguide layer material are selected such that the waveguide layer material has a higher bandgap than the material of the waveguide layers. In another example, a two dimensional array of InGaN diode-lasers is arranged to optically pump a one-dimensional array of II-VI edge-emitting heterostructure lasers.

Abstract translation: 半导体激光器包括包含至少一个II-VI半导体材料（26）的有源层的多层半导体激光异质结构，并由一个或多个氮化铟镓（InGaN）二极管激光器（38）进行光泵浦。 II-VI族半导体材料中的II族元素是锌，镉，镁，铍，锶和钡。 II-VI族半导体材料中的VI族元素是硫，硒和碲。 在激光器的一个实例中，边缘发射异质结构包括两个硒化锌镉活性层，两个磺酸锌镁纳米波导层和两个包层，也是锌硫酸镁镁。 选择包层材料和波导层材料中的元素的比例使得波导层材料具有比波导层的材料更高的带隙。 在另一示例中，布置了InGaN二极管激光器的二维阵列以光学泵浦II-VI边缘发射异质结构激光器的一维阵列。

公开(公告)号：WO98034284A1

公开(公告)日：1998-08-06

申请号：PCT/DE1998/000263

申请日：1998-01-29

IPC: H01L33/00 ,  H01S5/042 ,  H01S5/30 ,  H01S5/34 ,  H01S5/347 ,  H01S3/19

CPC classification number: B82Y20/00 ,  H01S5/0421 ,  H01S5/305 ,  H01S5/3059 ,  H01S5/3409 ,  H01S5/347

Abstract: The invention relates to an optoelectronic semiconductor component comprising a radiation-emitting active series of layers to which at least one poorly dopable semiconductor layer of a first conductivity type is assigned. A first highly doped degenerate transition layer of the first conductivity type and a second highly doped degenerate transition layer of a second conductivity type contrasting with the first conductivity type are arranged between the poorly dopable semiconductor layer and a contact layer of the semiconductor body assigned to said semiconductor layer.

Abstract translation: 具有发射辐射的有源层序列，其被分配了第一导电类型的至少一个可掺杂很差半导体层的光电子半导体器件。 该可掺杂很差半导体层和所述相关联的所述半导体主体的接触层中的一个之间，所述第一导电类型的第一重掺杂的简并结层和相反侧的第一导电类型的第二重掺杂的简并结层，所述第二导电型布置。

公开(公告)号：WO9531830A3

公开(公告)日：1996-01-04

申请号：PCT/IB9500292

申请日：1995-04-24

Applicant: PHILIPS ELECTRONICS NV ,  PHILIPS NORDEN AB

Inventor： MENSZ PIOTR

IPC: H01L29/221 ,  H01L29/267 ,  H01L33/00 ,  H01L33/28 ,  H01S5/00 ,  H01S5/042 ,  H01S5/327 ,  H01S5/347

CPC classification number: H01L33/28 ,  B82Y20/00 ,  H01L29/221 ,  H01L29/267 ,  H01L33/0087 ,  H01S5/0421 ,  H01S5/327 ,  H01S5/347

Abstract: Known semiconductor structures emitting blue light have a limited efficiency. It is the purpose of the present invention to obtain such a structure which is suitable for diodes and diode lasers in particular and which has an improved efficiency. According to the invention such a semiconductor structure comprises a first layer of a p-type II-VI compound of the formula: ZnxQ1-xSySe1-y wherein Q is an element selected from the group consisting of Mg, Cd and Mn, 0.5 « x « 1 and 0 « y « 1 and a substrate X of p-type GaAs, said first layer and said substrate being separated by a series of thin epitaxial undoped or p-doped layers of a total thickness of up to 2 νm and each layer of a thickness of 2 to 200 nm contacting opposing surfaces of said substrate and said first layer. Said series of layers comprise: a layer of In0.5Al0.5P contacting the opposing surface of said first layer, a layer of a compound selected from the group consisting of In0.5Ga0.5P and AlxGa1-xAs wherein x = 0.1 - 0.3 contacting the opposing surface of said substrate, a layer of In0.5Ga0.5P contacting said layer of AlxGa1-xAs and at least one layer of In0.5AlzGa0.5-zP wherein 0