METHOD OF FABRICATING A CONDUCTIVE LAYER ON AN IC USING NON-LITHOGRAPHIC FABRICATION TECHNIQUES

    公开(公告)号:WO2020234583A1

    公开(公告)日:2020-11-26

    申请号:PCT/GB2020/051222

    申请日:2020-05-19

    Abstract: A method for fabricating a thin-film integrated circuit, IC, including a plurality of electronic components, the method comprising: forming, using a first fabrication technique, the plurality of electronic components, and forming, using a second fabrication technique, a conductive layer on the plurality of electronic components to form a redistribution layer, RDL, wherein the first fabrication technique includes photolithographic patterning, and the first fabrication technique is different to the second fabrication technique.

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