公开(公告)号：WO1993012539A1

公开(公告)日：1993-06-24

申请号：PCT/US1992011122

申请日：1992-12-18

Applicant: RAYCHEM CORPORATION

Inventor： RAYCHEM CORPORATION ,  CHAZAN, David, Joel ,  WEIHE, Gary, Roy ,  OTTE, Richard, F.

IPC: H01L23/367

CPC classification number: H01L23/367 ,  H01L21/486 ,  H01L23/3677 ,  H01L2224/32225 ,  H05K1/0206 ,  H05K1/0306 ,  H05K3/0035 ,  H05K3/467 ,  H05K2201/0154 ,  H05K2201/10674 ,  H05K2203/0733

Abstract: Thermal post vias are formed within a formed multilayer, high density interconnect including a base and plural layers of metal conductors (68, 72, 76) separated by dielectric material (70) by the steps of: removing in a single step dielectric material at predetermined sites of the thermal post vias to define substantially cylindrical post holes, and forming the thermal post vias by emplacing conductor material, such as metal, into the post holes so that the material fully occupies and fills up the holes.