Abstract:
A composition is provided for polishing dielectric/metal composites, semiconductors and integrated circuits which contains an iodate compound. The iodate oxidizer may be used along with a compound or compounds which suppress the removal of the dielectric silica in the composite to provide an excellent selectivity of metal versus silica removal.
Abstract:
A composition is provided for polishing a composite comprised of silica and silicon nitride comprising: an aqueous medium, abrasive particles, a surfactant, and a compound which complexes with the silica and silicon nitride wherein the complexing agent has two or more functional groups each having a dissociable proton, the functional groups being the same or different.
Abstract:
A composition is provided, which is suitable for polishing SiO2, silicates, and silicon nitride, comprising an aqueous slurry of submicron SiO2 particles and a soluble inorganic salt or combination of soluble inorganic salts of total solution concentration below the critical coagulation concentration for the slurry, wherein the slurry pH is adjusted to within the range of about 9 to 10 by addition of a soluble amine or mixture of soluble amines. Optionally, the compositions of this invention may also comprise a polyhydric alcohol.
Abstract:
An aqueous slurry is provided for polishing or planarizing a workpiece which contains a metal, the solids portion of said slurry being comprised of about 1 to about 50 percent by weight of submicron alpha-alumina, the remainder of the solids being of a substantially less abrasive composition chosen from one or more of the group consisting of aluminum hydrates, aluminum hydroxides, gamma-alumina, delta-alumina, amorphous alumina, and amorphous silica. Also provided is a method for polishing the surface of a work piece which contains a metal wherein said aqueous slurry is used as the polishing composition during chemical-mechanical polishing.
Abstract:
The invention is a process for preparing chemically active solid oxide particles useful for polishing, composed primarily of CeO2, or CeO2 together with other oxides, comprising: (a) forming an aqueous solution comprised of a water soluble trivalent cerium salt and an oxidizing agent, and (b) aging said mixture in the liquid state for a time not less than 4 hours.