公开(公告)号：WO0214014A3

公开(公告)日：2002-05-02

申请号：PCT/US0125038

申请日：2001-08-09

Applicant: RODEL INC

Inventor： MANDIGO GLENN C ,  BARKER ROSS E II ,  LACK CRAIG D ,  SULLIVAN IAN G ,  GOLDBERG WENDY B

IPC: B24B37/04 ,  C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  B24B1/00

CPC classification number: C09G1/02 ,  B24B37/0056 ,  B24B37/04 ,  B24B37/044

Abstract: A method of polishing a wafer in a carrier with a polishing pad by controlling a ratio of platen speed to carrier speed (PS to CS) within a specific range, or by controlling a first polishing step with a ratio of PS to CS in the range of about 150:1 to about 1:150 followed by a second polishing step with a platen speed of about 0 to 20 rpm while maintaining the carrier speed used in the first polishing step, which maximizes clearing of residual material removed from a patterned wafer surface by polishing.

Abstract translation: 一种通过在特定范围内控制平台速度与载体速度之比（PS对CS）来抛光具有抛光垫的载体中的晶片的方法，或者通过控制PS与CS之比在该范围内的第一抛光步骤 约150:1至约1:150，然后进行第二抛光步骤，其平台速度为约0至20rpm，同时保持第一抛光步骤中使用的载体速度，其最大化清除从图案化晶片表面去除的残余材料 通过抛光。