Abstract:
A polishing composition for polishing a semiconductor wafer includes comprises water, an abrasive that is preferably colloidal silica, water-soluble cellulose having a molecular weight of at least about 1,000,000 and an alkaline compound that is preferably ammonia. Tetra methyl ammonium hydroxide may also be added to the polishing composition.
Abstract:
A composition is provided for polishing dielectric/metal composites, semiconductors and integrated circuits which contains an iodate compound. The iodate oxidizer may be used along with a compound or compounds which suppress the removal of the dielectric silica in the composite to provide an excellent selectivity of metal versus silica removal.
Abstract:
A method of polishing a wafer in a carrier with a polishing pad by controlling a ratio of platen speed to carrier speed (PS to CS) within a specific range, or by controlling a first polishing step with a ratio of PS to CS in the range of about 150:1 to about 1:150 followed by a second polishing step with a platen speed of about 0 to 20 rpm while maintaining the carrier speed used in the first polishing step, which maximizes clearing of residual material removed from a patterned wafer surface by polishing.
Abstract:
A semiconductor wafer (1) has, an underlying dielectric layer (3) with non-planarity features at its surface due to damascene topology, and a successive dielectric layer (9) that is without damascene topology overlying the first dielectric layer (3), the successive dielectric layer (9) having a smooth polished planar surface (10) that minimizes cumulative non-planarity. The surface is polished by chemical-mechanical planarization with a reactive liquid borne by an aqueous polishing fluid applied at an interface of the successive dielectric layer (3) and a polishing pad.
Abstract:
A polishing pad for use with a polishing fluid has, a polishing layer (10), a window (30) in an opening (16) through the polishing layer, and a fluid impermeable layer (40) spanning across the polishing layer and the window and the opening to provide an uninterrupted continuous barrier to leakage of polishing fluid, the fluid impermeabe layer having thereon an adhesive forming bond seals with the polishing layer and the window.
Abstract:
A carrier head assembly (200) of a substrate (202) polishing apparatus and a substrate supporting carrier pad (220) is disclosed. A down force is uniformly distributed over the backside of the substrate (202) by the carrier pad (220) adapted to be internally pressurized by the down force.
Abstract:
The invention is directed to a base-pad (2) for placement under a polishing pad (1) for use with a polishing fluid during a polishing operation, the base-pad (2) having a layer (7) with vertical elongated pores that absorb polishing fluid and that confine absorbed polishing fluid from transport laterally in the base-pad (2). Micropores in the layer (7) are impermeable to the polishing fluid and permeable to gasses.
Abstract:
A composition is provided, which is suitable for polishing SiO2, silicates, and silicon nitride, comprising an aqueous slurry of submicron SiO2 particles and a soluble inorganic salt or combination of soluble inorganic salts of total solution concentration below the critical coagulation concentration for the slurry, wherein the slurry pH is adjusted to within the range of about 9 to 10 by addition of a soluble amine or mixture of soluble amines. Optionally, the compositions of this invention may also comprise a polyhydric alcohol.
Abstract:
An aqueous slurry is provided for polishing or planarizing a workpiece which contains a metal, the solids portion of said slurry being comprised of about 1 to about 50 percent by weight of submicron alpha-alumina, the remainder of the solids being of a substantially less abrasive composition chosen from one or more of the group consisting of aluminum hydrates, aluminum hydroxides, gamma-alumina, delta-alumina, amorphous alumina, and amorphous silica. Also provided is a method for polishing the surface of a work piece which contains a metal wherein said aqueous slurry is used as the polishing composition during chemical-mechanical polishing.
Abstract:
An improved slurry composition and methods of using it are provided for final polishing of silicon wafers. The composition comprises water, submicron silica particles between 0.2 and 0.5 percent by weight of this composition, a salt at a concentration of about 100 to about 1000 ppm, an amine compound at a concentration sufficient to effect a composition pH of about 8 to about 11, and a polyelectrolyte dispersion agent at a concentration of about 20 to about 500 ppm, wherein the composition has a total sodium and potassium content below about 1 ppm, and an iron, nickel, and copper content each below about 0.1 ppm, all ppm being parts per million by weight of the composition.