POLISHING COMPOSITION
    1.
    发明申请
    POLISHING COMPOSITION 审中-公开
    抛光组合物

    公开(公告)号:WO03072669A9

    公开(公告)日:2004-04-01

    申请号:PCT/US0304684

    申请日:2003-02-14

    Applicant: RODEL INC

    CPC classification number: C09G1/02

    Abstract: A polishing composition for polishing a semiconductor wafer includes comprises water, an abrasive that is preferably colloidal silica, water-soluble cellulose having a molecular weight of at least about 1,000,000 and an alkaline compound that is preferably ammonia. Tetra methyl ammonium hydroxide may also be added to the polishing composition.

    Abstract translation: 用于抛光半导体晶片的抛光组合物包括水,优选为胶态二氧化硅的磨料,分子量至少约1,000,000的水溶性纤维素和优选为氨的碱性化合物。 四氢氧化铵也可以加入到抛光组合物中。

    IMPROVED COMPOSITIONS AND METHODS FOR POLISHING
    2.
    发明申请
    IMPROVED COMPOSITIONS AND METHODS FOR POLISHING 审中-公开
    改进的组合物和抛光方法

    公开(公告)号:WO1995024054A1

    公开(公告)日:1995-09-08

    申请号:PCT/US1995002793

    申请日:1995-02-28

    Applicant: RODEL, INC.

    CPC classification number: C09G1/02

    Abstract: A composition is provided for polishing dielectric/metal composites, semiconductors and integrated circuits which contains an iodate compound. The iodate oxidizer may be used along with a compound or compounds which suppress the removal of the dielectric silica in the composite to provide an excellent selectivity of metal versus silica removal.

    Abstract translation: 提供了用于抛光含有碘酸盐化合物的介电/金属复合材料,半导体和集成电路的组合物。 碘酸盐氧化剂可以与抑制复合材料中电介质二氧化硅去除的化合物或化合物一起使用,以提供金属与二氧化硅去除的优异选择性。

    CHEMICAL MECHANICAL PLANARIZATION OF METAL SUBSTRATES
    3.
    发明申请
    CHEMICAL MECHANICAL PLANARIZATION OF METAL SUBSTRATES 审中-公开
    金属基材的化学机械平面化

    公开(公告)号:WO0214014A3

    公开(公告)日:2002-05-02

    申请号:PCT/US0125038

    申请日:2001-08-09

    Applicant: RODEL INC

    CPC classification number: C09G1/02 B24B37/0056 B24B37/04 B24B37/044

    Abstract: A method of polishing a wafer in a carrier with a polishing pad by controlling a ratio of platen speed to carrier speed (PS to CS) within a specific range, or by controlling a first polishing step with a ratio of PS to CS in the range of about 150:1 to about 1:150 followed by a second polishing step with a platen speed of about 0 to 20 rpm while maintaining the carrier speed used in the first polishing step, which maximizes clearing of residual material removed from a patterned wafer surface by polishing.

    Abstract translation: 一种通过在特定范围内控制平台速度与载体速度之比(PS对CS)来抛光具有抛光垫的载体中的晶片的方法,或者通过控制PS与CS之比在该范围内的第一抛光步骤 约150:1至约1:150,然后进行第二抛光步骤,其平台速度为约0至20rpm,同时保持第一抛光步骤中使用的载体速度,其最大化清除从图案化晶片表面去除的残余材料 通过抛光。

    CHEMICAL MECHANICAL POLISHING OF DIELECTRIC MATERIALS
    4.
    发明申请
    CHEMICAL MECHANICAL POLISHING OF DIELECTRIC MATERIALS 审中-公开
    介电材料的化学机械抛光

    公开(公告)号:WO0229878A3

    公开(公告)日:2003-01-23

    申请号:PCT/US0130109

    申请日:2001-09-26

    Applicant: RODEL INC

    Abstract: A semiconductor wafer (1) has, an underlying dielectric layer (3) with non-planarity features at its surface due to damascene topology, and a successive dielectric layer (9) that is without damascene topology overlying the first dielectric layer (3), the successive dielectric layer (9) having a smooth polished planar surface (10) that minimizes cumulative non-planarity. The surface is polished by chemical-mechanical planarization with a reactive liquid borne by an aqueous polishing fluid applied at an interface of the successive dielectric layer (3) and a polishing pad.

    Abstract translation: 半导体晶片(1)具有由于镶嵌拓扑而在其表面具有非平面特征的底层电介质层(3),以及不具有叠加在第一介电层(3)上的镶嵌拓扑的连续介质层(9) 所述连续介电层(9)具有使累积非平面度最小化的光滑抛光平面(10)。 通过化学机械平面化处理表面,其中反应液体由施加在连续介质层(3)和抛光垫的界面处的水性抛光液承载。

    POLISHING PAD
    5.
    发明申请
    POLISHING PAD 审中-公开
    抛光垫

    公开(公告)号:WO0123141A9

    公开(公告)日:2002-11-14

    申请号:PCT/US0026652

    申请日:2000-09-28

    Applicant: RODEL INC

    CPC classification number: B24B37/205 B24B49/12 B24D9/08

    Abstract: A polishing pad for use with a polishing fluid has, a polishing layer (10), a window (30) in an opening (16) through the polishing layer, and a fluid impermeable layer (40) spanning across the polishing layer and the window and the opening to provide an uninterrupted continuous barrier to leakage of polishing fluid, the fluid impermeabe layer having thereon an adhesive forming bond seals with the polishing layer and the window.

    Abstract translation: 用于抛光液的抛光垫具有抛光层(10),通过抛光层的开口(16)中的窗口(30)和穿过抛光层和窗口的流体不可渗透层(40) 和开口以提供抛光液泄漏的不间断的连续屏障,其上具有粘合剂形成粘合的流体非渗透层与抛光层和窗口密封。

    SUBSTRATE SUPPORTING CARRIER PAD
    6.
    发明申请
    SUBSTRATE SUPPORTING CARRIER PAD 审中-公开
    基板支撑载体垫

    公开(公告)号:WO0216080A3

    公开(公告)日:2002-06-20

    申请号:PCT/US0125964

    申请日:2001-08-20

    Applicant: RODEL INC

    Inventor: OLIVER MICHAEL R

    CPC classification number: B24B37/30 B24B41/061

    Abstract: A carrier head assembly (200) of a substrate (202) polishing apparatus and a substrate supporting carrier pad (220) is disclosed. A down force is uniformly distributed over the backside of the substrate (202) by the carrier pad (220) adapted to be internally pressurized by the down force.

    Abstract translation: 公开了一种衬底(202)研磨装置的载体头组件(200)和衬底支撑衬垫(220)。 向下的力通过适于通过向下的力被内部加压的载体垫(220)均匀分布在衬底(202)的背面上。

    BASE-PAD FOR A POLISHING PAD
    7.
    发明申请
    BASE-PAD FOR A POLISHING PAD 审中-公开
    抛光垫底座

    公开(公告)号:WO0202274A3

    公开(公告)日:2002-04-11

    申请号:PCT/US0120890

    申请日:2001-06-29

    Applicant: RODEL INC

    CPC classification number: B24B37/22 B24B37/24 B24D11/02

    Abstract: The invention is directed to a base-pad (2) for placement under a polishing pad (1) for use with a polishing fluid during a polishing operation, the base-pad (2) having a layer (7) with vertical elongated pores that absorb polishing fluid and that confine absorbed polishing fluid from transport laterally in the base-pad (2). Micropores in the layer (7) are impermeable to the polishing fluid and permeable to gasses.

    Abstract translation: 本发明涉及一种用于在抛光操作期间放置在抛光垫(1)下面与抛光液一起使用的基垫(2),所述基垫(2)具有垂直细长孔的层(7) 吸收抛光液,并且将吸收的抛光液限制在基垫(2)中横向运输。 层(7)中的微孔对于抛光液是不可渗透的,并且可渗透气体。

    COMPOSITIONS AND METHODS FOR POLISHING SILICA, SILICATES, AND SILICON NITRIDE
    8.
    发明申请
    COMPOSITIONS AND METHODS FOR POLISHING SILICA, SILICATES, AND SILICON NITRIDE 审中-公开
    用于抛光二氧化硅,硅酸盐和氮化硅的组合物和方法

    公开(公告)号:WO1997047430A1

    公开(公告)日:1997-12-18

    申请号:PCT/US1997002725

    申请日:1997-02-26

    Applicant: RODEL, INC.

    CPC classification number: C09G1/02

    Abstract: A composition is provided, which is suitable for polishing SiO2, silicates, and silicon nitride, comprising an aqueous slurry of submicron SiO2 particles and a soluble inorganic salt or combination of soluble inorganic salts of total solution concentration below the critical coagulation concentration for the slurry, wherein the slurry pH is adjusted to within the range of about 9 to 10 by addition of a soluble amine or mixture of soluble amines. Optionally, the compositions of this invention may also comprise a polyhydric alcohol.

    Abstract translation: 提供了一种组合物,其适用于抛光SiO 2,硅酸盐和氮化硅,其包含亚微米SiO 2颗粒的水性浆料和总溶液浓度的可溶性无机盐或可溶性无机盐的混合物低于浆料的临界凝结浓度, 其中通过加入可溶性胺或可溶性胺的混合物将浆液pH调节至约9至10的范围内。 任选地,本发明的组合物还可以包含多元醇。

    IMPROVED POLISHING SLURRIES AND METHODS FOR THEIR USE
    9.
    发明申请
    IMPROVED POLISHING SLURRIES AND METHODS FOR THEIR USE 审中-公开
    改进的抛光流程及其使用方法

    公开(公告)号:WO1997013889A1

    公开(公告)日:1997-04-17

    申请号:PCT/US1996016425

    申请日:1996-10-04

    Applicant: RODEL, INC.

    CPC classification number: C09K3/1463 C09G1/02 C09K3/1409 C23F3/00

    Abstract: An aqueous slurry is provided for polishing or planarizing a workpiece which contains a metal, the solids portion of said slurry being comprised of about 1 to about 50 percent by weight of submicron alpha-alumina, the remainder of the solids being of a substantially less abrasive composition chosen from one or more of the group consisting of aluminum hydrates, aluminum hydroxides, gamma-alumina, delta-alumina, amorphous alumina, and amorphous silica. Also provided is a method for polishing the surface of a work piece which contains a metal wherein said aqueous slurry is used as the polishing composition during chemical-mechanical polishing.

    Abstract translation: 提供含水浆料用于抛光或平面化包含金属的工件,所述浆料的固体部分由约1-约50重量%的亚微米α-氧化铝组成,其余的固体物质基本上较少的磨料 选自一种或多种由水合铝,氢氧化铝,γ-氧化铝,δ-氧化铝,无定形氧化铝和无定形二氧化硅组成的组合物。 还提供了一种用于抛光含有金属的工件的表面的方法,其中所述水性浆料在化学机械抛光期间用作抛光组合物。

    COMPOSITIONS FOR POLISHING SILICON WAFERS AND METHODS
    10.
    发明申请
    COMPOSITIONS FOR POLISHING SILICON WAFERS AND METHODS 审中-公开
    用于抛光硅波的组合物和方法

    公开(公告)号:WO1996038262A1

    公开(公告)日:1996-12-05

    申请号:PCT/US1996007973

    申请日:1996-05-30

    Applicant: RODEL, INC.

    CPC classification number: B24B37/044 Y10S977/775 Y10S977/888

    Abstract: An improved slurry composition and methods of using it are provided for final polishing of silicon wafers. The composition comprises water, submicron silica particles between 0.2 and 0.5 percent by weight of this composition, a salt at a concentration of about 100 to about 1000 ppm, an amine compound at a concentration sufficient to effect a composition pH of about 8 to about 11, and a polyelectrolyte dispersion agent at a concentration of about 20 to about 500 ppm, wherein the composition has a total sodium and potassium content below about 1 ppm, and an iron, nickel, and copper content each below about 0.1 ppm, all ppm being parts per million by weight of the composition.

    Abstract translation: 提供改进的浆料组合物和使用它的方法用于硅晶片的最终抛光。 该组合物包含水,亚微米二氧化硅颗粒占该组合物重量的0.2%至0.5%,浓度为约100至约1000ppm的盐,浓度足以使组合物pH为约8至约11的胺化合物 以及浓度为约20至约500ppm的聚电解质分散剂,其中所述组合物的总钠和钾含量低于约1ppm,铁,镍和铜含量低于约0.1ppm,全部ppm为 组分的重量百万分数。

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