公开(公告)号：WO2007148891A1

公开(公告)日：2007-12-27

申请号：PCT/KR2007/002876

申请日：2007-06-14

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Byoung Su ,  WON, Jun Ho

Inventor： LEE, Byoung Su ,  WON, Jun Ho

IPC: H01L27/146

CPC classification number: H01L27/14632 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14687

Abstract: An image sensor using a back-illuminated photodiode and a manufacturing method thereof are provided. According to the present invention, since a surface of the back-illuminated photodiode can be stably treated, the back-illuminated photodiode can be formed to have a low dark current, a constant sensitivity of blue light for all photodiodes, and high sensitivity. In addition, it is possible to manufacture an image sensor with high density by employing a three dimensional structure in which a photodiode and a logic circuit are separately formed on different substrates.

Abstract translation: 提供了使用背照式光电二极管的图像传感器及其制造方法。 根据本发明，由于可以稳定地对背照式光电二极管的表面进行处理，因此可以将背照式光电二极管形成为具有低暗电流，对于所有光电二极管的蓝光的灵敏度恒定和高灵敏度。 另外，通过采用在不同基板上分别形成光电二极管和逻辑电路的三维结构，可以制造高密度的图像传感器。

公开(公告)号：WO2007102659A1

公开(公告)日：2007-09-13

申请号：PCT/KR2007/000644

申请日：2007-02-07

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Byoung Su ,  WON, Jun Ho

Inventor： LEE, Byoung Su ,  WON, Jun Ho

IPC: H04N13/02

CPC classification number: H04N5/335 ,  H04N13/239

Abstract: A CMOS stereo camera for obtaining a three-dimensional image, in which two CMOS image sensors having the same characteristics are disposed on a single semiconductor substrate, is provided. The CMOS image sensors have image planes which are located on the same plane by disposing the two CMOS image sensors on the same semiconductor substrate. A digital signal processor (DSP) for processing a three-dimensional image is disposed between the CMOS image sensors. Optical axes of the CMOS image sensors are parallel with each other and orthogonal to the image planes. Since optical devices formed on the CMOS image sensors can be manufactured through the same processes, distortion of the optical axes between the two CMOS image sensors can be minimized.

Abstract translation: 提供了一种用于获得三维图像的CMOS立体照相机，其中具有相同特性的两个CMOS图像传感器设置在单个半导体衬底上。 CMOS图像传感器具有通过将两个CMOS图像传感器布置在同一半导体衬底上而位于同一平面上的图像平面。 用于处理三维图像的数字信号处理器（DSP）设置在CMOS图像传感器之间。 CMOS图像传感器的光轴彼此平行并与图像平面正交。 由于可以通过相同的工艺制造形成在CMOS图像传感器上的光学器件，所以可以使两个CMOS图像传感器之间的光轴的失真最小化。

公开(公告)号：WO2007086649A1

公开(公告)日：2007-08-02

申请号：PCT/KR2006/005266

申请日：2006-12-07

Applicant: SILICONFILE TECHNOLOGIES INC. ,  WON, Jun Ho ,  OH, Se Jung ,  RIM, Jae Young ,  LEE, Byoung Su

Inventor： WON, Jun Ho ,  OH, Se Jung ,  RIM, Jae Young ,  LEE, Byoung Su

IPC: H01L27/146

CPC classification number: H01L27/14685 ,  H01L27/14623 ,  H01L27/1463

Abstract: Provided is an image sensor and a method of manufacturing the same. The image sensor includes anti-reflection films which are formed between a plurality of metal wire lines of the lowest metal wiring layer and a semiconductor substrate and between one of the metal wiring layers and another metal wiring layer. The image sensor having the anti-reflection films according to the present invention can reduce color crosstalk and noises in comparison with a conventional image sensor by using the anti-reflection films formed above the surroundings of the photodiodes.

Abstract translation: 提供了一种图像传感器及其制造方法。 图像传感器包括形成在最下层金属布线层的多根金属布线和半导体基板之间以及一个金属布线层和另一个金属布线层之间的防反射膜。 根据本发明的具有防反射膜的图像传感器可以通过使用形成在光电二极管周围的防反射膜与现有的图像传感器相比来减少颜色串扰和噪声。

公开(公告)号：WO2007078059A1

公开(公告)日：2007-07-12

申请号：PCT/KR2006/005265

申请日：2006-12-07

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Byoung Su ,  WON, Jun Ho

Inventor： LEE, Byoung Su ,  WON, Jun Ho

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14687

Abstract: An image sensor with color filters capable of minimizing a distance through which incident light reaches photodiodes and flattening the color filters by minimizing step heights among color filters, and a method of manufacturing the same are provided. In the image sensor with the color filters, a metal is doped into an interlayer insulating SiO 2 layer opened through a photosensitive film, and the color filters of red, green, and blue are formed in the interlayer insulating SiO 2 layer through a heat treatment. In this case, a color filter array can be flattened by removing step heights among color filters generated in an conventional method in which the interlayer insulating SiO 2 layer is sequentially coated with the color filters of red, green, and blue so as to form a color filter array. In addition, the distance through which the incident light reaches the photodiodes can be reduced by forming the color filters in the interlayer insulating SiO 2 layer, thereby improving the sensitivity of the image sensor.

Abstract translation: 一种具有滤色器的图像传感器及其制造方法，该滤色器能够使入射光到达光电二极管的距离最小化，并且通过最小化滤色器的步进高度来平坦化滤色器。 在具有滤色器的图像传感器中，金属被掺杂到通过感光膜开放的层间绝缘SiO 2层中，并且红色，绿色和蓝色的滤色器形成在层间绝缘 SiO 2层通过热处理。 在这种情况下，滤色器阵列可以通过除去在传统方法中产生的滤色器中的阶梯高度，其中层间绝缘SiO 2层依次涂覆有红色，绿色的滤色器， 和蓝色，以形成滤色器阵列。 此外，通过在层间绝缘SiO 2层中形成滤色器，可以减少入射光到达光电二极管的距离，从而提高图像传感器的灵敏度。

公开(公告)号：WO2009066909A3

公开(公告)日：2009-05-28

申请号：PCT/KR2008/006751

申请日：2008-11-17

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Byoung Su

Inventor： LEE, Byoung Su

IPC: H04N5/335

Abstract: Provided is a unit pixel of an image sensor in which photodiodes are arranged in a stacking structure and transfer gates are provided for the respective photodiodes so that signals are sequentially transferred to extract information on a plurality of color components and, by which dark current generated at a substrate surface can be reduced by using a buried-type photodiode. Accordingly, since a buried-type photodiode is used in a unit pixel of an image sensor including a photodiode having a stacking structure, dark current generated by surface detect can be suppressed. In addition, since signals are sequentially transferred through transfer gates for respective photodiodes having a stacking structure, information on a plurality of color components can be extracted without having to use complex peripheral circuits.

公开(公告)号：WO2009066896A1

公开(公告)日：2009-05-28

申请号：PCT/KR2008/006624

申请日：2008-11-10

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Byoung Su

Inventor： LEE, Byoung Su

IPC: G01N33/533 ,  H01L31/10 ,  H01L27/146 ,  G01N33/50

CPC classification number: H01L27/14625 ,  G01N21/6454 ,  G01N2021/6471 ,  H01L27/14621 ,  H01L27/14627

Abstract: Disclosed is a fluorescent biochip diagnosis device including: an image sensor having a plurality of photo-detectors; and a band-pass filter unit having a plurality of band-pass filters formed on a plurality of the photo-detectors, wherein a plurality of the band-pass filters are implemented by forming a nanostructure pattern in a metal layer. Since the fluorescent biochip diagnosis device has little optical loss due to a short interval between the biochip and the photo-detector, excellent sensitivity can be provided. Also, since signals can be simultaneously measured by combining light beams having a short wavelength used as an illumination depending on a type of a fluorescent protein material, cost of the diagnosis device and a diagnosis time can be reduced.

Abstract translation: 公开了一种荧光生物芯片诊断装置，包括：具有多个光检测器的图像传感器; 以及具有形成在多个光检测器上的多个带通滤波器的带通滤波器单元，其中通过在金属层中形成纳米结构图案来实现多个带通滤波器。 由于荧光生物芯片诊断装置由于生物芯片和光电检测器之间的间隔小而具有很小的光学损失，因此可以提供极好的灵敏度。 此外，由于可以根据荧光蛋白质材料的种类组合用作照明的短波长的光束同时测量信号，所以可以降低诊断装置的成本和诊断时间。

公开(公告)号：WO2008150139A1

公开(公告)日：2008-12-11

申请号：PCT/KR2008/003191

申请日：2008-06-09

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Byoung Su

Inventor： LEE, Byoung Su

IPC: H01L27/14

CPC classification number: H01L27/14667 ,  H01L27/14627

Abstract: Provided is a stacked image sensor. Particularly, provided are a stacked image sensor including a photosensitive element portion having a photo-conductive thin film on an upper portion of a wafer where a peripheral circuit is formed and a method of manufacturing the stacked image sensor. In the stacked image sensor according to the present invention, since a wafer where a circuit is formed and a photosensitive element portion are formed in a stacked structure, a whole size of the image sensor can be reduced, and there is no optical crosstalk due to absorption of incident light to adjacent pixels. In addition, since a photo-conductive element having a high light absorbance is used, a high photo-electric conversion efficiency can be obtained. In addition, in the method of manufacturing a stacked image sensor according to the present invention, since the upper photosensitive element can be formed by using a simple low-temperature process, a production cost can be reduced.

Abstract translation: 提供了一种堆叠图像传感器。 特别地，提供了一种堆叠图像传感器，其包括在形成外围电路的晶片的上部上具有光导薄膜的感光元件部分和制造叠层图像传感器的方法。 在根据本发明的堆叠式图像传感器中，由于形成了电路的晶片和形成有层叠结构的感光元件部分，所以能够减小图像传感器的整体尺寸，并且由于 将入射光吸收到相邻像素。 此外，由于使用具有高吸光度的光导体元件，因此可以获得高的光电转换效率。 此外，在根据本发明的层叠图像传感器的制造方法中，由于可以通过使用简单的低温处理来形成上部感光元件，所以可以降低制造成本。

公开(公告)号：WO2008136634A1

公开(公告)日：2008-11-13

申请号：PCT/KR2008/002547

申请日：2008-05-07

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Byoung Su

Inventor： LEE, Byoung Su

IPC: H01L27/146

CPC classification number: H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14643 ,  H01L27/148

Abstract: The present invention relates to a unit pixel of an image sensor having a large area photodiode with high sensitivity, and more particularly, to a unit pixel of an image sensor having a high sensitivity photodiode which includes a plurality of transfer gates on the photodiode having a large area to effectively transfer photocharges generated at the photodiode to a floating diffusion region.

Abstract translation: 本发明涉及具有高灵敏度的大面积光电二极管的图像传感器的单位像素，更具体地，涉及具有高灵敏度光电二极管的图像传感器的单位像素，该灵敏度光电二极管在光电二极管上包括多个传输门， 大面积以有效地将在光电二极管处产生的光电荷转移到浮动扩散区域。

公开(公告)号：WO2006123881A1

公开(公告)日：2006-11-23

申请号：PCT/KR2006/001817

申请日：2006-05-16

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Byoung Su

Inventor： LEE, Byoung Su

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14609 ,  H01L31/028 ,  H01L31/0288 ,  H01L31/103 ,  Y02E10/547

Abstract: A photodiode for an image sensor having an improved light sensitivity and decrease in size over a silicon-based photodiode and a manufacturing method of the photodiode are provided. The photodiode for the image sensor has a silicon-germanium alloy layer, which contains germanium of 0.1 to 15 wt% with respect to a weight of silicon-germanium alloy, formed on a silicon substrate and a photodioderegion formed on the silicon-germanium alloy layer. Since the light absorbance of germanium is high, the photodiode in which a relatively thin silicon- germanium alloy layer is formed has a superior property of optical sensing to a conventional silicon-based image sensor. Accordingly, the silicon-germanium alloy layer thinner than a silicon layer used in a conventional image sensor can be used for absorbing sufficient light so as to decrease in size of the image sensor using the photodiode. In addition, it is possible to operate the photodiode at a high speed due to rapid transport of charges in the silicon-germanium alloy layer.

Abstract translation: 提供了一种用于具有改善的光敏度和相对于硅基光电二极管的尺寸减小的图像传感器的光电二极管以及光电二极管的制造方法。 用于图像传感器的光电二极管具有硅 - 锗合金层，其包含相对于在硅衬底上形成的硅 - 锗合金重量为0.1至15重量％的锗和形成在硅 - 锗合金层上的光电二极管 。 由于锗的吸光度高，因此形成相对较薄的硅 - 锗合金层的光电二极管具有优异的光学感测性能与传统的硅基图像传感器。 因此，比传统图像传感器中使用的硅层薄的硅 - 锗合金层可以用于吸收足够的光，从而减小使用光电二极管的图像传感器的尺寸。 此外，由于硅 - 锗合金层中的电荷的快速传输，可以高速操作光电二极管。

公开(公告)号：WO2009066894A2

公开(公告)日：2009-05-28

申请号：PCT/KR2008/006603

申请日：2008-11-10

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Byoung Su

Inventor： LEE, Byoung Su

IPC: H01L27/146

CPC classification number: H01L27/14609 ,  H01L27/14603 ,  H01L27/14641 ,  H01L27/14643

Abstract: The present invention relates to a technology for reducing dark current noise by discharging electrons accumulated on a surface of an image sensor photodiode. In an N-type or P-type photodiode, a channel is formed between the photodiode and a power voltage terminal, so that electrons (or holes) accumulated on a surface of the photodiode are discharged to the power voltage terminal through the channel.

Abstract translation: 本发明涉及通过放电积累在图像传感器光电二极管的表面上的电子来减少暗电流噪声的技术。 在N型或P型光电二极管中，在光电二极管和电源电压端子之间形成通道，使得积聚在光电二极管表面的电子（或空穴）通过通道被排放到电源电压端子。