公开(公告)号：WO2006137652A1

公开(公告)日：2006-12-28

申请号：PCT/KR2006/002274

申请日：2006-06-14

Applicant: SILICONFILE TECHNOLOGIES INC. ,  PARK, Cheol Soo

Inventor： PARK, Cheol Soo

IPC: H01L27/146

CPC classification number: H01L27/14689 ,  H01L27/14603 ,  H01L27/1463

Abstract: Provided is an image sensor pixel in which a specific or entire area of a field oxide layer inside the pixel can be used as a photodiode so as to increase a fill factor, and a fabrication method thereof. The image sensor pixel includes: a photodiode which is buried inside a semiconductor substrate; and pixel transistors which are formed after the photodiode is formed. In addition, the image sensor pixel includes: pixel transistors; a field oxide layer which separates the pixel transistors; and a photodiode which is located at the lower portion in a specific or entire area of the field oxide layer. In addition, the fabrication method includes: (a) forming a trench region in a specific area of a semiconductor substrate; (b) forming a photodiode which includes at least a portion of the trench region; and (c) forming pixel transistors after the photodiode is formed. Accordingly, a surface area of a photodiode increases, thereby improving a fill factor and photosensitivity. In addition, in a unit pixel of an image sensor, the entire pixel area becomes a photodiode region except for a region where transistors are formed, thereby maximizing the fill factor.

Abstract translation: 提供一种图像传感器像素，其中像素内部的场氧化物层的特定或整个区域可以用作光电二极管以增加填充因子及其制造方法。 图像传感器像素包括：掩埋在半导体衬底内的光电二极管; 以及在形成光电二极管之后形成的像素晶体管。 另外，图像传感器像素包括：像素晶体管; 分离像素晶体管的场氧化物层; 以及位于场氧化物层的特定区域或整个区域中的下部的光电二极管。 此外，制造方法包括：（a）在半导体衬底的特定区域中形成沟槽区域; （b）形成包括沟槽区域的至少一部分的光电二极管; 和（c）在形成光电二极管之后形成像素晶体管。 因此，光电二极管的表面积增加，从而提高填充因子和光敏性。 此外，在图像传感器的单位像素中，除了形成晶体管的区域之外，整个像素区域成为光电二极管区域，从而最大化填充因子。

公开(公告)号：WO2007021106A1

公开(公告)日：2007-02-22

申请号：PCT/KR2006/003164

申请日：2006-08-11

Applicant: SILICONFILE TECHNOLOGIES INC. ,  PARK, Cheol Soo ,  LEE, Do Young

Inventor： PARK, Cheol Soo ,  LEE, Do Young

IPC: H01L27/146

CPC classification number: H01L27/14603 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14689

Abstract: A new structure of a photodiode of a pixel in CMOS image sensor and a method of fabricating the same are provided. The photodiode is fabricated by using one photo mask, so that the number of masks decreases and the fabrication processes are simplified. In addition, two conducting layers constituting a photodiode are self-aligned, so that a fabrication process for connecting the photodiode and a transfer transistor is not required. Accordingly, a problem of channeling generated in a lower portion of a gate of the transfer transistor can be solved, so that an improved pixel can be fabricated.

Abstract translation: 提供CMOS图像传感器中的像素的光电二极管的新结构及其制造方法。 通过使用一个光掩模制造光电二极管，使得掩模的数量减少并且制造过程被简化。 此外，构成光电二极管的两个导电层是自对准的，因此不需要用于连接光电二极管和转移晶体管的制造工艺。 因此，可以解决在转移晶体管的栅极的下部产生的沟道问题，从而可以制造改进的像素。

公开(公告)号：WO2006137651A1

公开(公告)日：2006-12-28

申请号：PCT/KR2006/002273

申请日：2006-06-14

Applicant: SILICONFILE TECHNOLOGIES INC. ,  PARK, Cheol Soo

Inventor： PARK, Cheol Soo

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14603 ,  H01L27/14632 ,  H01L27/14689

Abstract: A method of manufacturing a pixel of an image sensor including a protruded photodiode capable of improving photosensitivity and reducing crosstalk between neighboring pixels and a pixel of an image sensor formed using the method are provided. The pixel of the semiconductor image sensor includes a protrudedly shaped photodiode on a surface of a semiconductor substrate. A surface area of the photodiode with respect to a surface area of the image sensor pixel increases to improve photosensitivity, and a microlens is not needed due to the improvement of the fill factor. In addition, the crosstalk of neighboring pixels can be removed.

Abstract translation: 提供一种制造图像传感器的像素的方法，该图像传感器包括能够提高光敏性并减少相邻像素之间的串扰并且使用该方法形成的图像传感器的像素的突出光电二极管。 半导体图像传感器的像素包括在半导体衬底的表面上的突出形状的光电二极管。 相对于图像传感器像素的表面区域的光电二极管的表面积增加以提高光敏性，并且由于填充因子的改善而不需要微透镜。 此外，可以去除相邻像素的串扰。