公开(公告)号：WO2008156274A1

公开(公告)日：2008-12-24

申请号：PCT/KR2008/003400

申请日：2008-06-17

Applicant: SILICONFILE TECHNOLOGIES INC. ,  RIM, Jae Young ,  OH, Se Jung

Inventor： RIM, Jae Young ,  OH, Se Jung

IPC: H01L27/146

CPC classification number: H01L27/14609 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/1469

Abstract: The present invention provides a pixel array having a three-dimensional structure and an image sensor having the pixel array. The pixel array has a three-dimensional structure in which a photodiode, a transfer transistor, a reset transistor, a convert transistor, and a select transistor are divided and formed on a first wafer and a second wafer, chips on the first and second wafers are connected in a vertical direction after die-sorting the chips. The first wafer includes a plurality of photodiodes for generating electric charges corresponding to an incident video signal, a plurality of transfer transistors for transferring the electric charges generated by the photodiodes to floating diffusion regions, a plurality of STIs circling one of the photodiodes and one transfer transistor connected to the one photodiode, a first super-contact which extends from a lower portion of the plurality of the STIs to a lower surface of the wafer, and a second super-contact which penetrates the plurality of the STIs and a portion of the first super-contact. The electric charges accumulated in the floating diffusion regions are transferred to the second wafer through the second super-contact.

Abstract translation: 本发明提供具有三维结构的像素阵列和具有像素阵列的图像传感器。 像素阵列具有三维结构，其中光电二极管，传输晶体管，复位晶体管，转换晶体管和选择晶体管被分割并形成在第一晶片和第二晶片上，在第一和第二晶片上的芯片 在对芯片进行芯片分选之后沿垂直方向连接。 第一晶片包括用于产生对应于入射视频信号的电荷的多个光电二极管，用于将由光电二极管产生的电荷转移到浮动扩散区域的多个转移晶体管，围绕光电二极管之一的一个转移 晶体管连接到一个光电二极管，从多个STI的下部延伸到晶片的下表面的第一超级接触件，以及穿过多个STI的第二超级接触件和一部分 第一超级联系。 通过第二超级接触将积聚在浮动扩散区域中的电荷转移到第二晶片。

公开(公告)号：WO2008032914A1

公开(公告)日：2008-03-20

申请号：PCT/KR2007/001768

申请日：2007-04-12

Applicant: SILICONFILE TECHNOLOGIES INC. ,  OH, Se Jung ,  RIM, Jae Young

Inventor： OH, Se Jung ,  RIM, Jae Young

IPC: H01L27/146

CPC classification number: H01L27/14603 ,  H01L27/14683

Abstract: Provided is a unit pixel of an image sensor in which the number of contacts is reduced and a wiring area is also reduced. Therefore, it is possible to manufacture an image sensor having an ultra-fine pixel having a pixel size of about 2 to 3q by using a low process technology having 0.13 to 0.18q technology. The number of contact holes in the unit pixel of the image sensor according to the present invention is reduced, so that a wiring area is reduced, and when the layout is designed, a relatively low process technology can by applied. Therefore, there is an advantage in that costs allocated to apply the high process technology can be reduced.

Abstract translation: 提供了一种图像传感器的单位像素，其中触点数量减少并且布线面积也减小。 因此，可以通过使用具有0.13〜0.18q技术的低工艺技术来制造具有像素尺寸为大约2至3q的超精细像素的图像传感器。 根据本发明的图像传感器的单位像素中的接触孔的数量减少，使得布线面积减小，并且当布局被设计时，可以通过应用相对低的处理技术。 因此，可以降低分配用于应用高工艺技术的成本的优点。

公开(公告)号：WO2007086649A1

公开(公告)日：2007-08-02

申请号：PCT/KR2006/005266

申请日：2006-12-07

Applicant: SILICONFILE TECHNOLOGIES INC. ,  WON, Jun Ho ,  OH, Se Jung ,  RIM, Jae Young ,  LEE, Byoung Su

Inventor： WON, Jun Ho ,  OH, Se Jung ,  RIM, Jae Young ,  LEE, Byoung Su

IPC: H01L27/146

CPC classification number: H01L27/14685 ,  H01L27/14623 ,  H01L27/1463

Abstract: Provided is an image sensor and a method of manufacturing the same. The image sensor includes anti-reflection films which are formed between a plurality of metal wire lines of the lowest metal wiring layer and a semiconductor substrate and between one of the metal wiring layers and another metal wiring layer. The image sensor having the anti-reflection films according to the present invention can reduce color crosstalk and noises in comparison with a conventional image sensor by using the anti-reflection films formed above the surroundings of the photodiodes.

Abstract translation: 提供了一种图像传感器及其制造方法。 图像传感器包括形成在最下层金属布线层的多根金属布线和半导体基板之间以及一个金属布线层和另一个金属布线层之间的防反射膜。 根据本发明的具有防反射膜的图像传感器可以通过使用形成在光电二极管周围的防反射膜与现有的图像传感器相比来减少颜色串扰和噪声。