公开(公告)号：WO0014791A9

公开(公告)日：2000-08-10

申请号：PCT/US9918780

申请日：1999-08-17

Applicant: SPECTRIAN

Inventor： HEBERT FRANCOIS ,  NG SZEHIM DANIEL

IPC: H01L21/336 ,  H01L21/74 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78

CPC classification number: H01L29/66659 ,  H01L21/743 ,  H01L29/1087 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/41775 ,  H01L29/42368 ,  H01L29/7835

Abstract: Method of fabricating a high power RF lateral diffused MOS transistor (LDMOS) having increased reliability includes fabricating an N-drift region for the drain prior to fabrication of the gate (24) contact and other process steps in fabricating the transistor. The resulting device has reduced adverse effects from hot carrier injection including reduced threshold voltage shift over time and reduced maximum current reduction over time. Linearity of device is maximized along with increased reliability while channel length (2) is reduced.

Abstract translation: 制造具有增加的可靠性的高功率RF侧向扩散MOS晶体管（LDMOS）的方法包括在制造栅极（24）接触之前制造用于漏极的N-漂移区域以及制造晶体管的其它工艺步骤。 所得到的装置具有减少热载流子注入的不利影响，包括随时间降低的阈值电压偏移和随时间减小的最大电流减小。 器件的线性度随着信道长度（2）的减小而增加，可靠性最大化。