公开(公告)号：WO2014152852A2

公开(公告)日：2014-09-25

申请号：PCT/US2014/027981

申请日：2014-03-14

Applicant: SUNEDISON, INC.

Inventor： KIMBEL, Steven L. ,  FERGUSON, Steve J. ,  SWAMINATHAN, Tirumani N. ,  ZEPEDA, Salvador ,  HILKER, John David ,  HOLZER, Joseph C. ,  MEYER, Benjamin M. ,  HOLDER, John D.

IPC: C30B15/12

CPC classification number: C30B15/12 ,  C30B29/06

Abstract: A system for growing a crystal ingot from a melt includes a first crucible, a second crucible, and a weir. The first crucible has a first base with a top surface and a first sidewall that form a first cavity. The second crucible is disposed within the first cavity of the first crucible, and has a second base and a second sidewall that form a second cavity. The second base has a bottom surface that is shaped to allow the second base to rest against the top surface of the first base. The second crucible includes a crucible passageway to allow movement of the melt therethrough. The weir is disposed inward from the second sidewall to inhibit movement of the melt from a location outward of the weir to a location inward of the weir.

Abstract translation: 用于从熔体生长晶锭的系统包括第一坩埚，第二坩埚和堰。 第一坩埚具有第一基座，第一基座具有形成第一腔的顶表面和第一侧壁。 第二坩埚设置在第一坩埚的第一腔内，并具有形成第二腔的第二基部和第二侧壁。 第二基座具有成形为允许第二基座靠在第一基座的顶表面上的底表面。 第二坩埚包括坩埚通道以允许熔体通过其移动。 堰从第二侧壁向内设置，以防止熔体从堰外的位置移动到堰内部的位置。