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    CRYSTAL PULLER FOR INHIBITING MELT CONTAMINATION
    3.
    发明申请
    CRYSTAL PULLER FOR INHIBITING MELT CONTAMINATION 审中-公开
    用于抑制熔体污染的水晶拉丝机

    公开(公告)号：WO2016044689A1

    公开(公告)日：2016-03-24

    申请号：PCT/US2015/050859

    申请日：2015-09-18

    Applicant: SUNEDISON, INC.

    Inventor： KIMBEL, Steven L. ,  MEYER, Benjamin Michael ,  ZEPEDA, Salvador ,  FERGUSON, Steven J.

    IPC: C30B15/00 ,  C30B15/02

    CPC classification number: C30B15/10 ,  C30B15/002 ,  C30B15/02 ,  Y10T117/10 ,  Y10T117/1032 ,  Y10T117/106 ,  Y10T117/1068

    Abstract: A crystal puller for growing a crystal ingot includes a housing, insulation, a crucible assembly, a heat shield, and a dust barrier. The housing encloses a growth chamber, and has an upper wall with an inner surface and an aperture. The insulation separates an inside of the housing into an upper area and a lower area, and has a central opening. The crucible assembly is within the lower area to contain the melt. The heat shield is adjacent the central opening of the insulation, and forms a labyrinth gas path with the crucible assembly. The dust barrier extends from the inner surface of the upper wall to one of the insulation and the heat shield, and forms a seal with the upper wall around the aperture to inhibit particles from entering the growth chamber through the upper area of the housing.

    Abstract translation: 用于生长晶体锭的晶体拉拔器包括壳体，绝缘体，坩埚组件，隔热罩和防尘屏障。 壳体包围生长室，并且具有带有内表面和孔的上壁。 绝缘体将壳体的内部分隔成上部区域和下部区域，并且具有中心开口。 坩埚组件在容纳熔体的下部区域内。 隔热板靠近绝缘体的中心开口，并与坩埚组件形成迷宫式气路。 防尘屏障从上壁的内表面延伸到绝缘层和隔热层之一，并且与孔周围的上壁形成密封，以防止颗粒通过壳体的上部区域进入生长室。

    CRUCIBLE ASSEMBLY FOR CONTROLLING OXYGEN AND RELATED METHODS
    4.
    发明申请
    CRUCIBLE ASSEMBLY FOR CONTROLLING OXYGEN AND RELATED METHODS 审中-公开
    用于控制氧的坩埚组件及相关方法

    公开(公告)号：WO2014152852A2

    公开(公告)日：2014-09-25

    申请号：PCT/US2014/027981

    申请日：2014-03-14

    Applicant: SUNEDISON, INC.

    Inventor： KIMBEL, Steven L. ,  FERGUSON, Steve J. ,  SWAMINATHAN, Tirumani N. ,  ZEPEDA, Salvador ,  HILKER, John David ,  HOLZER, Joseph C. ,  MEYER, Benjamin M. ,  HOLDER, John D.

    IPC: C30B15/12

    CPC classification number: C30B15/12 ,  C30B29/06

    Abstract: A system for growing a crystal ingot from a melt includes a first crucible, a second crucible, and a weir. The first crucible has a first base with a top surface and a first sidewall that form a first cavity. The second crucible is disposed within the first cavity of the first crucible, and has a second base and a second sidewall that form a second cavity. The second base has a bottom surface that is shaped to allow the second base to rest against the top surface of the first base. The second crucible includes a crucible passageway to allow movement of the melt therethrough. The weir is disposed inward from the second sidewall to inhibit movement of the melt from a location outward of the weir to a location inward of the weir.

    Abstract translation: 用于从熔体生长晶锭的系统包括第一坩埚，第二坩埚和堰。 第一坩埚具有第一基座，第一基座具有形成第一腔的顶表面和第一侧壁。 第二坩埚设置在第一坩埚的第一腔内，并具有形成第二腔的第二基部和第二侧壁。 第二基座具有成形为允许第二基座靠在第一基座的顶表面上的底表面。 第二坩埚包括坩埚通道以允许熔体通过其移动。 堰从第二侧壁向内设置，以防止熔体从堰外的位置移动到堰内部的位置。

    CRYSTAL GROWING SYSTEM AND CRUCIBLES FOR ENHANCING THE HEAT TRANSFER TO THE MELT BY DESINGING A DOUBLE CRUCIBLE
    5.
    发明申请
    CRYSTAL GROWING SYSTEM AND CRUCIBLES FOR ENHANCING THE HEAT TRANSFER TO THE MELT BY DESINGING A DOUBLE CRUCIBLE 审中-公开
    晶体生长系统和用于通过设计双重可变性来增强熔体传热的结构

    公开(公告)号：WO2015084602A1

    公开(公告)日：2015-06-11

    申请号：PCT/US2014/066681

    申请日：2014-11-20

    Applicant: SUNEDISON, INC.

    Inventor： SWAMINATHAN, Tirumani N. ,  HILKER, John David ,  ZEPEDA, Salvador

    IPC: C30B15/10 ,  C30B15/12 ,  C30B29/06 ,  C30B15/02

    CPC classification number: C30B15/12 ,  C30B11/002 ,  C30B15/002 ,  C30B29/06 ,  Y10T117/1052

    Abstract: A system for growing an ingot from a melt includes an outer crucible, an inner crucible, and a weir. The outer crucible includes a first sidewall and a first base. The first sidewall and the first base define an outer cavity for containing the melt. The inner crucible is located within the outer cavity, and has a central longitudinal axis. The inner crucible includes a second sidewall and a second base having an opening therein. The opening in the second base is concentric with the central longitudinal axis. The weir is disposed between the outer crucible and the inner crucible for supporting the inner crucible.

    Abstract translation: 用于从熔体生长锭的系统包括外坩埚，内坩埚和堰。 外坩埚包括第一侧壁和第一基座。 第一侧壁和第一基座限定用于容纳熔体的外部空腔。 内坩埚位于外腔内，并具有中心纵轴。 内坩埚包括第二侧壁和在其中具有开口的第二基部。 第二基座中的开口与中心纵向轴线同心。 堰体设置在外坩埚和用于支撑内坩埚的内坩埚之间。

    CZOCHRALSKI CRUCIBLE FOR CONTROLLING OXYGEN AND RELATED METHODS
    6.
    发明申请
    CZOCHRALSKI CRUCIBLE FOR CONTROLLING OXYGEN AND RELATED METHODS 审中-公开
    用于控制氧气的CZOCHRALSKI可溶物及相关方法

    公开(公告)号：WO2014159879A1

    公开(公告)日：2014-10-02

    申请号：PCT/US2014/025388

    申请日：2014-03-13

    Applicant: SUNEDISON, INC.

    Inventor： SWAMINATHAN, Tirumani N. ,  ZEPEDA, Salvador ,  HILKER, John David

    IPC: C30B15/12 ,  C30B29/06

    CPC classification number: C30B15/12 ,  C30B15/002 ,  C30B29/06 ,  Y10T117/1052

    Abstract: A system for growing an ingot from a melt includes a first crucible, a second crucible, and a weir. The first crucible has a first base and a first sidewall that form an outer cavity for containing the melt. The weir is located on top of the first base at a location inward from the first sidewall to inhibit movement of the melt from a location outward of the weir to a location inward of the weir. The second crucible is sized for placement within the outer cavity and has a second base and a second sidewall that form an inner cavity. Related methods are also disclosed.

    Abstract translation: 用于从熔体生长锭的系统包括第一坩埚，第二坩埚和堰。 第一坩埚具有形成用于容纳熔体的外腔的第一基底和第一侧壁。 堰从第一侧壁向内位于第一基座的顶部，以防止熔体从堰外的位置移动到堰的内侧。 第二坩埚的尺寸适于放置在外腔内，并具有形成内腔的第二底座和第二侧壁。 还公开了相关方法。

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