公开(公告)号：WO2016179022A1

公开(公告)日：2016-11-10

申请号：PCT/US2016/030209

申请日：2016-04-29

Applicant: SUNEDISON, INC.

Inventor： BASAK, Soubir ,  SAMANTA, Gaurab ,  ZEPEDA, Salvador ,  LUERS, Christopher V. ,  KIMBEL, Steven L. ,  HUDSON, Carissima Marie ,  SREEDHARAMURTHY, Hariprasad ,  SCALA, Roberto ,  PHILLIPS, Richard J. ,  SWAMINATHAN, Tirumani N. ,  CHEN, Jihong ,  PALMORE, Stephen Wayne ,  WILDES, Peter Drury

IPC: C30B15/04 ,  C30B15/12 ,  C30B29/06

CPC classification number: C30B29/06 ,  C30B15/04 ,  C30B15/12

Abstract: Methods for growing single crystal ingots doped with volatile dopants and ingots grown according to the methods are described herein.

Abstract translation: 本文描述了根据方法生长的掺杂有挥发性掺杂剂和锭的单晶锭的生长方法。