公开(公告)号：WO2002086180A2

公开(公告)日：2002-10-31

申请号：PCT/US2002/010678

申请日：2002-04-04

Applicant: THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS

Inventor： MCNALLAN, Michael, J. ,  ERSOY, Daniel ,  GOGOTSI, Yury ,  WELZ, Sascha

IPC: C23C

CPC classification number: C04B41/009 ,  A61F2/30767 ,  A61F2/32 ,  A61F2/34 ,  A61F2/36 ,  A61F2/38 ,  A61F2/3804 ,  A61F2/3845 ,  A61F2/3859 ,  A61F2/3877 ,  A61F2/389 ,  A61F2/40 ,  A61F2/4059 ,  A61F2/4081 ,  A61F2/4241 ,  A61F2/4261 ,  A61F2002/30253 ,  A61F2002/30301 ,  A61F2002/30626 ,  A61F2002/30649 ,  A61F2002/30685 ,  A61F2002/30878 ,  A61F2002/30892 ,  A61F2002/30925 ,  A61F2002/30957 ,  A61F2002/3611 ,  A61F2002/4018 ,  A61F2002/4258 ,  A61F2002/4271 ,  A61F2002/4631 ,  A61F2230/0076 ,  A61F2230/0095 ,  A61F2310/00269 ,  A61F2310/00281 ,  A61F2310/00574 ,  A61F2310/0058 ,  A61F2310/00586 ,  A61L27/303 ,  B01J3/065 ,  B01J21/18 ,  B01J27/22 ,  B01J37/24 ,  B01J2203/0655 ,  C04B35/62839 ,  C04B35/62884 ,  C04B35/62897 ,  C04B41/4584 ,  C04B41/5001 ,  C04B41/5002 ,  C04B41/5346 ,  C04B41/85 ,  C04B41/91 ,  C04B2111/00353 ,  C04B2111/0081 ,  C04B2111/00836 ,  C04B2111/94 ,  C04B2235/3826 ,  C04B2235/383 ,  C04B2235/3834 ,  C23F1/00 ,  F16C11/0619 ,  F16C33/043 ,  F16C33/16 ,  F16C33/30 ,  C04B41/0072 ,  C04B41/4519 ,  C04B41/4556 ,  C04B35/565 ,  C04B35/56

Abstract: A process for the synthesis of carbon coatings on the surface of metal carbides, preferably SiC, by etching in a halogen-containing gaseous etchant, and optionally hydrogen gas, leading to the formation of a carbon layer on the metal carbide. The reaction is performed in gas mixtures containing 0 to two moles of hydrogen for every two moles of halogen gas, preferably about 0.5 to one mole of hydrogen gas for eery two moles of halogen gas, at temperatures from about 100° C to about 4,000° C. preferably about 800° C to about 1,000° C, over any time range, maintaining a pressure of preferably about one atmosphere.

Abstract translation: 通过在含卤素的气体蚀刻剂和任选的氢气中蚀刻，在金属碳化物，优选SiC的表面上合成碳涂层的方法，导致在金属碳化物上形成碳层。 反应在含有0至2摩尔氢气的气体混合物中进行，每2摩尔卤素气体，优选约0.5至1摩尔氢气用于2摩尔卤素气体，温度为约100至约4,000度 优选约800℃至约1000℃，在任何时间范围内，保持优选约1个大气压。